Contact grid array system

ABSTRACT

A scalable, low cost, reliable, compliant, low profile, low insertion force, high-density, separable and reconnectable connector for high speed, high performance electronic circuitry and semiconductors. The electrical connector can be used to make, for example, electrical connections from components such as a Printed Circuit Board (PCB) to another PCB, MPU, NPU, or other semiconductor device. A normalized working range for an array of elastic contacts of the interposer can be about 0.2 to 1.0. A reversible normalized working range is maintained through multiple connections and reconnections using a highly elastic material for the contact arms. In one aspect, a first electrical component having a first array pitch can be connected to a second electrical component having a second array pitch.

This application is a continuation-in-part of U.S. patent applicationSer. No. 10/412,729, filed Apr. 11, 2003, and is a continuation in partof U.S. patent application Ser. No. 10/731,213 filed Dec. 8, 2003, whichare hereby incorporated by reference in their entirety.

BACKGROUND

1. Field of the Invention

This invention pertains to elastic electric contacts made by processesfor making electrical contacts using manufacturing techniques thatresult in flexibility in design and performance of the contacts.

2. Background of the Invention

The ability to make separable electrical contact with contacts ofminiature electronic circuits has become more problematic as themechanical, electrical, and reliability requirements of these electricalcontacts become more demanding. Nano springs, pogo pins, micro springs,and other miniature contact devices have been developed to deal with theproblem of making reliable electrical contact between a microcircuit andthe rest of an electronic system. The problem for the industry, however,is that no particular contact design appears to provide all of theproperties required, even where specially designed contact elements areused in specific applications. None of the existing contacts can meetall of the design criteria.

It is desirable to have separable electrical connections in electronicapplications because these connections are used in system assembly,device testing, and wafer probing.

DESCRIPTION OF THE DRAWINGS

FIG. 1 is a flow chart that illustrates a method for forming aninterposer, according to one aspect of this invention.

FIG. 2 is a schematic diagram that illustrates an exemplary conductivesheet having a pre-formed contact array, according to a configuration ofthe present invention.

FIG. 3A is a flow chart that illustrates exemplary steps involved in amethod for forming an interposer, according to one aspect of the presentinvention.

FIG. 3B is a flow chart that depicts exemplary steps involved in amethod for forming an interposer, according to another aspect of thepresent invention.

FIG. 4A is an image that illustrates a plan view of an array of capturepads disposed on a substrate, according to one configuration of thisinvention.

FIG. 4B is an image that illustrates a cross section of an exemplarysubstrate illustrating a series of conductive vias surrounded by capturepads, according to one configuration of this invention.

FIG. 5 is a graph that illustrates the shrinkage in a sheet of Be—Cualloy after annealing at 600 F, in accordance with exemplary processingsteps of FIG. 3A.

FIGS. 6A and 6B are schematic diagrams that illustrate a perspectiveview of exemplary two dimensional contact structures.

FIGS. 6C and 6D are schematic diagrams that illustrate a perspectiveview of exemplary three dimensional formed contact structures based onthe two dimensional precursor structures of 6A, and 6B, respectively.

FIGS. 7A and 7B are images that illustrate an example of the effect ofrelief depressions on a contact structure according to the method ofFIG. 3A.

FIG. 7C is an image that illustrates another exemplary contactarrangement having a depression in the contact sheet containing theelastic arm.

FIG. 7D is an image that illustrates an exemplary contact arrangementhaving a spring sheet through hole that is filled with extruded adhesivematerial from layer.

FIG. 7E is a graph that depicts load-displacement curves of exemplarycontact arms in substrates with and without relief depressions,respectively.

FIGS. 8A and 8B are schematic diagrams that illustrate top and sideviews of contact arms arranged in accordance with configurations of thisinvention.

FIG. 8C is a schematic diagram that depicts an enlarged sectional viewof exemplary contact arms for a BLGA contact array.

FIG. 9 is an image that illustrates a cross-sectional view of a portionof an interposer arranged according to another configuration of thisinvention.

FIG. 10 is an image that illustrates a contact structure after formationof a conductive path between a contact and conductive via, according toone aspect of this invention.

FIG. 11 is an image that illustrates a cross-sectional image of acontact arm, according to one configuration of the present invention.

FIG. 12 is an image that illustrates an exemplary contact structure thatincludes a coverlay disposed on the contact.

FIG. 13 is a schematic diagram that illustrates a method for forming aninterposer, according to another aspect of this invention.

FIGS. 14A to 14H are schematic drawings that illustrate the processingsteps for forming a connector according to one aspect of the presentinvention.

FIGS. 15A to 15H are schematic drawings that illustrate the processingsteps for forming a connector according to one aspect of the presentinvention.

FIGS. 16A to 16H are schematic drawings that illustrate the processingsteps for forming a connector according to another aspect the presentinvention.

FIGS. 17A to 17H are schematic drawings that illustrate the processingsteps for forming an array of connectors, according to a further aspectof the present invention.

FIG. 18A is a schematic diagram that illustrates plan views of a contactarm array, in accordance with one configuration of the presentinvention.

FIG. 18B is a schematic diagram that depicts a plan view of severaldifferent exemplary contact arm designs.

FIG. 19 is a schematic diagram that depicts a sectional view of anexemplary BLGA system of this invention, and its attachment to a PCB.

FIG. 20 is a schematic diagram that depicts angled plan views of twoexample contact arm designs for the BLGA system of this invention.

FIG. 21 is a schematic diagram that shows an enlarged perspective viewof different exemplary contact arm designs for contacting solder balls.

FIG. 22 is a schematic diagram that illustrates a top schematic view ofa contact arranged in accordance with another configuration of thisinvention.

FIGS. 23 and 24 are schematic diagrams that illustrate a top view andsectional view, respectively, of an exemplary clamping system for thecontact systems of this invention.

FIG. 25 is a graph of the load versus displacement for an exemplary BLGAsystem of this invention.

FIG. 26 is a graph of the load versus displacement for an exemplary BLGAsystem of this invention.

FIGS. 27A-D are schematic diagrams that illustrate in plan viewalternative interposers according to further configurations of thisinvention.

FIG. 28 is a schematic diagram that illustrates an interposer having twocontacts each remotely connected to a conductive via, according toanother configuration of this invention.

FIG. 29A is a schematic diagram that illustrates an interposer thatincludes a conductive via array arranged in a first region of insulatingsubstrate and a contact array arranged in a second region of substrate.

FIG. 29B is a schematic diagram that illustrates another interposer thatincludes an elastic contact array and an array of conductive vias havinga second pitch, according to another configuration of this invention.

FIGS. 30A and 30B are schematic diagrams that cross-sectional views of aconnector, according to an alternate embodiment of the presentinvention.

FIGS. 31 and 32 are data sheets that illustrate the effect of changingthe adhesive type and flow restrictor configuration on elastic contactworking range.

FIG. 33A is an image that illustrates, in accordance with a furtherconfiguration of this invention, a capture pad layout that includes padshaving an arc-shaped slot configured to capture adhesive during abonding process.

FIGS. 33B-33E are schematic diagrams that illustrate, in perspectiveview, flow restrictor variations provided in exemplary contactstructures, according to further configurations of the presentinvention.

FIG. 34A is an image that illustrates a plan view of an exemplarycontact arrangement according to a further configuration of thisinvention.

FIG. 34B is a schematic diagram that illustrates a cross-section view ofa portion of the exemplary contact arrangement of FIG. 34A.

FIG. 34C is a schematic diagram that illustrates a variant of thecontact structure of FIGS. 34A and 34B.

FIG. 35 is an image that illustrates a contact structure after formingconductive portions on top of an adhesive layer, according to one aspectof this invention.

For purposes of brevity and clarity, like components and elements of theapparatus of this invention will bear the same designations or numberingthroughout the figures.

DETAILED DESCRIPTION

Aspects of the present invention are related to methods for fabricatingelectrical connectors by lithographic patterning of metallic layers toform an array or arrays of contact elements. The metallic layers can beapplied to a connector substrate before patterning to form the contactelements, or can be free standing layers that are subjected topatterning before joining to the connector substrates. In general, thecontacts can be formed from a single layer of metallic material, but canalso be formed from multiple layers of the same material, or ofdifferent materials, in which one or more layers can be added to thecontacts after a metallic layer is patterned to form a contact array.Connectors formed by these methods include substrates having a contactarray disposed on a single side, or having contact arrays disposed onboth sides, such as interposers.

Connector elements and interposer layers fabricated according to aspectsof the present invention can be produced using one or more of theguidelines set forth below.

Choice of metal for the metallic contacts can be guided by the desiredcombination of properties for the contact. Examples include choice ofmaterial for a core region of the metallic contact to impart the desiredelastic properties. Cu, Cu-alloys, and stainless steel are examples ofmetallic materials that may form a core region of a contact. Forexample, a stainless steel or Cu-alloy layer can be chosen as a corelayer from which to form a contact, due to the strong mechanicalelasticity; an intermediate Cu layer can chosen to coat the core layerbecause of the good conductivity of pure Cu; and an Au or Au-alloy layercan be chosen as an outer layer for low interface resistance and goodcorrosion resistance.

The choice of a dielectric (electrically insulating) or semiconductingmaterial for the contact array substrate is guided by the particularapplication. Exemplary configurations of the present invention includeconnectors having FR4, polymer, ceramic, and semiconductor substrates.

Other configurations of the invention include connectors havingmultiple, redundant conductive contacts to improve electrical connectionbetween components that are coupled using the connector.

Inclusion of extra structural features in contacts can be chosen toimprove performance. In some configurations of the present invention,for example, elastic contacts having asperities are fabricated toimprove electrical contact to an external electrical component. Theasperities on a contact facilitate making good electrical contact byproviding concentrated force to break through any passivation layerscovering a conductive surface being engaged by the contact.

The choice of the mix of contact types used in a connector fabricated inaccordance with the present invention is generally guided by theparticular application. For example, it may be desirable to have thesame type of elastic contacts on both sides of the interposer substrateto connect similar components on either side of the interposer. On theother hand, it may be desirable to use solder, conductive adhesive, orsome other electrical contact method on one side of a double sidedconnector, and an elastic contact array on the other side of theconnector.

The inclusion of additional features, such as metallic features, withina connector substrate is also guided by the particular application forthe connector. For example, additional metal planes or circuits may bechosen for inclusion within the interior of the connector substrate inthe case where good thermal dissipation is desired. Inclusion ofadditional metal planes or circuits within the connector may be guidedby the need for electrical shielding, power delivery, addition ofelectronic components, or otherwise improving the electrical performanceof the connector.

The discussion to immediately follow discloses methods for formingelectrical connectors containing arrays of elastic contacts, inaccordance with aspects of the present invention.

FIG. 1 generally illustrates a method for forming an interposeraccording to one aspect of this invention. In step 2, a plurality ofconductive vias are provided within an insulating substrate. Theinsulating substrate can be, for example, a PCB-type material or aceramic. The conductive vias can be formed by a number of methodsincluding electroless plating of through holes formed in a substrate. Inone example, the substrate is further provided with a copper cladding onone or both sides. Preferably, the copper cladding thickness is in therange of about 0.2-0.7 mils. The conductive vias can be formed, forexample, by drilling the insulating substrate and subsequent plating ofthe vias.

In step 4, a plurality of (electrically) conductive paths that arecoupled to respective vias are provided for the substrate. The term“provided for the substrate” indicates that the conductive paths areaffixed to the substrate, either on an outer surface of the substrate orembedded within the substrate. In one configuration, the conductivepaths are provided on at least one surface of the insulating substrate.The conductive paths are arranged so that one end of the conductive pathelectrically connects to a conductive via. In one variant of theinvention, steps 2 and 4 are performed in a single step. For example,plated through holes can be formed in which a conductive layer extendsonto a surface of the substrate, such that the portion extending on asurface of the substrate constitutes a conductive path that maintainselectrical contact with the conductive via. In the case where asubstrate is provided with a surface copper (or other metal) cladding,the plating of the vias in step 2 can serve to connect conductivevertical via walls with the copper cladding that lies on the surface ofthe substrate and surrounds the via. Subsequently, for example, thesurface copper cladding is etched into conductive capture pads thatsurround the via.

On the other hand, the conductive paths can consist of elaborate circuitpatterns each of whose conductive lines connect to a respective via andextend along a surface of the substrate or are embedded within thesubstrate. The circuit patterns can be formed and embedded within asubstrate below the substrate surface in step 2. For example, embeddedconductive lines can each be formed that contact a via within thesubstrate. Provisions can be made so that the end of the embeddedconductive line opposite the via can be further contacted through aconductive material contained in a second via that extends to asubstrate surface. The second via can subsequently be connected to aconductive elastic contact providing an electrical connection from thefirst conductive via to the elastic contact.

In another variation, a circuit pattern having lines that extend to theconductive vias can be formed within the copper (metal) cladding. Theends of the lines opposite to those connected to vias can be connectedto respective elastic contacts in subsequent processing steps.

In step 6, an array of elastic contacts is formed. Preferably, the arrayof elastic contacts is formed within an electrically conducting sheet.Examples of such electrically conductive sheets include copper alloys,such as BeCu. The sheet thickness is configured to impart the desiredelastic behavior to contact arms formed from the conductive sheet. Forexample, for contact arms having a length in the range of 5-50 mils, thesheet thickness is preferably in the range of about 1-3 mils. Theformation of an array of elastic contacts (described further below)generally includes the substeps of patterning a planar conductive sheet;selectively etching the patterned sheet to form two dimensional contactstructures; and forming the two dimensional contact structures intothree dimensional contacts having elastic contact portions that extendabove the plane of the contact sheet. Once formed, the array of elasticcontacts comprises an array of semi-isolated features, such as array 202illustrated in FIG. 2, and discussed further below. After formation,heat treatment of the contacts can be performed to adjust the mechanicalproperties of the elastic contacts.

In step 8, the conductive sheet containing the array of elastic contactsis bonded to the substrate. This step can be repeated to affix aseparate conductive sheet with an array of elastic contacts on a secondside of the insulating substrate. As described further below, thebonding step can involve, for example, preparation of the conductivesheet surface to be bonded, providing an adhesive layer between theconductive sheet and substrate, providing features in the substrateand/or conductive sheet to account for adhesive layer flow duringbonding, and affixing the conductive sheet to the interposer substratesurface under heat and pressure.

During the bonding process, the positions of contacts within theconductive sheet can be registered so that they are aligned with respectto conductive vias to which the contacts are to be coupled. For example,each contact can be placed above a pre-existing conductive path that isconnected to a via. Alternatively, during the bonding process, thepositions of contacts within the conductive sheet need to be alignedwith vias to which the contacts are to be coupled. After bonding,conductive paths between contacts and respective vias can be defined.

To aid in the bonding process, a lamination spacer is typically providedon an outer surface of the conductive spring sheet. The spacer typicallyis configured as a thin sheet having an array of holes that correspondto the positions of elastic contacts in the conductive sheet. Thelamination spacer is placed such that the surface of the spacer contactsthe surface of the spring sheet only in planar portions of the springsheet, and the holes of the lamination spacer accommodate the elasticcontacts, such that the contact arms remain untouched. The thickness ofthe lamination spacer typically is equal to or greater than the heightat which the distal ends of the elastic contacts extend above theconductive sheet surface. In this manner, a planar press plate can beclamped against the outer surface of the lamination spacer withoutcontacting the elastic contact arms, which do not protrude above the topsurface of the lamination spacer.

In step 10, the elastic contacts are electrically connected torespective conductive vias. As described in more detail below withrespect to FIGS. 3A and 3B, contacts formed in the conductive sheet canbe connected to the vias by means of a plating process that fills gapsbetween the conductive sheet that contain the contacts and theconductive vias.

In step 12, the electrical contacts are electrically isolated from oneanother (singulated). In this step, unwanted portions of a conductivespring sheet are removed. In so doing, an array of electrical contactscan be formed on one or both sides of an interposer, where some(partially singulated) or all (completely singulated) of the contactscan be electrically isolated from other contacts while individualcontacts remain electrically coupled to respective conductive vias. Thisstep of singulation, as discussed further below, is accomplishedaccording to lithographic patterning and etching of the conductivespring sheet. In one variation, also discussed below, the singulationstep can also act to define conductive paths in the conductive sheetthat connect elastic contacts to conductive vias.

The methods described below with respect to FIGS. 3A and 3B representmore detailed variations derived from the method of FIG. 1. These stepscan be used to fabricate interposer contact structures such as thosedescribed in FIGS. 6A-12, 14A-24, and 27A-35 to follow.

FIG. 3A illustrates exemplary steps involved in a method for forming aninterposer, according to one aspect of the present invention.

In step 300, a plurality of vias are formed in an insulating substrate.In one configuration of this invention, the insulating substrate is cladon top and bottom surfaces with a conductive cladding layer. In oneexample, the vias are patterned into a two dimensional array of viasaccording to a desired pattern. Preferably, the vias are drilled throughthe entire thickness of the insulating substrate such that a conductivepath can be formed from one side of the substrate to the opposite sideby plating the vias. Preferably, the vias are subject to at least a seedlayer deposition in step 300. The seed layer forms the template for athicker conductive coating that is subsequently formed by plating.

In step 301, if the interposer substrate is provided with a conductivecladding, the cladding can be etched to form isolated conductiveregions, where one or more of the isolated conductive regions can format least a portion of a conductive path to a respective elastic contact,wherein the conductive path serves to electrically connect the elasticcontact to a respective conductive via. For example, the isolatedconductive regions can be arranged as an array of conductive capturepads. FIG. 4A illustrates a plan view of an arrangement 400 ofconductive capture pads 402, according to one configuration of theinvention. The conductive capture pads are arranged in a two dimensionalarray and each include an inner circular region 404 in which theconductive material comprising the pad is removed. The spacing and sizeof circular portions 404 can be designed to align over an array ofconductive vias provided in the substrate, such that the capture pads donot cover the vias. Subsequently, the interposer substrate provided withcapture pads can be prepared using a combination of an alkaline cleanand a micro etch that includes a dilute sulfuric acid solution. Elasticcontacts can subsequently be placed on such capture pads, for example,by bonding a spring sheet containing the elastic contacts to theinterposer substrate. The elastic contacts can be electrically connectedto the pads, such that an electrical connection between the contact andconductive via is formed.

FIG. 4B shows a cross section of a substrate 406, arranged according toa configuration of this invention, illustrating a series of conductivevias 407 whose outer portions 408 are each surrounded by capture pads402 at the surfaces of the substrate. The capture pads 402 are arrangedso that a conductive contact structure placed on top of a pad can beconveniently electrically connected to a conductive via.

In step 302, an elastic contact material such as Be—Cu, Spring Steel,titanium copper, phosphor bronze or any other alloy with suitablemechanical properties is selected. The selected material is thenprovided in the form of a spring sheet to serve as a layer from whichcontact elements of the interposer are fabricated. The selection ofmaterial can be based on the desired application and may entailconsiderations of mechanical and electrical performance of contacts tobe fabricated from the spring sheet, as well as process compatibilities,such as etch characteristics and formability of contacts.

Optionally, the spring sheets can be heat treated prior to subsequentprocessing or can be treated after subsequent formation of contactelements. In one example, an alloy of copper beryllium (Cu—Be) is chosenthat comprises a super-saturated solution of Be. The supersaturatedsolution has relatively low strength and high ductility and can readilybe deformed to form elastic contact elements, such as contact arms asdescribed further below. Subsequent to formation of contact arms, thesupersaturated alloy can be treated at a temperature such thatprecipitation of a second phase occurs, wherein dislocation are pinnedand the multiphase material imparts a high strength to the resultingcontact arms.

In step 304, a contact shape is designed. The design can comprise simplyselecting a known design that can be stored for use within a designprogram, or can entail designing contacts using CAD tools such as Gerberart work. The design can be loaded into a tool used to pattern a springsheet to be etched to form elastic contacts. The design can be used, forexample, as a mask design, to fabricate a lithography mask used topattern a resist layer on the spring sheet with the contact design.Because the shape of contacts can be readily altered using design toolssuch as Gerber, modification of contact design can be quicklyaccomplished as needed.

In one variation, the contact shape design step includes the use ofmodeling of contact behavior. For example, an interposer designer mayhave certain performance criteria for a contact in mind, such asmechanical behavior. Modeling tools such as COSMOS®, produced byStructural Research and Analysis Corporation, and ANSYS,™ produced byANSYS, Inc., can be used to model the behavior of a basic contact shapein three dimensions, aiding in selection of an overall design of contactshape and size. Once the desired contact shape and size is determined,this information can be stored as a mask design and subsequently usedfor patterning the spring sheet.

As part of the contact design process of step 304, the desiredorientation of a contact shape with respect to a spring sheet used toform the contacts can be specified. The grain structure of metallicsheets is generally anisotropic. Contacts formed in specific alignmentswith respect to the grain orientation are more resilient as a spring.Consequently, contact alignment with respect to the grain orientationcan be used to select the degree of resiliency desired. Accordingly,after establishing the relative grain anisotropy within a spring sheetto be used for forming contacts, the grain anisotropy can be used toselect the alignment direction of longitudinal portions of an elasticcontact arm design, in order to impart the desired resiliency to thecontact.

In step 305, a contact design is scaled. The scaling of a design, suchas a mask design, first entails determining the desired final dimensionsand shape of the two dimensional contact to be fabricated. Next, thedesired final dimensions are scaled to produce a scaled two dimensionaldesign having dimensions appropriately altered (typically enlarged) toaccount for processing effects taking place after two dimensionalpatterning that affect the final contact structure obtained. In oneexample, once a final desired contact structure is determined, a contactdesign that is to be used to produce the determined contact structure inan etched spring sheet is scaled to take into account shrinkage in thespring sheet after subsequent annealing that takes place during contactfabrication. FIG. 5 illustrates the shrinkage in a sheet of Be—Cu alloyafter annealing at 600 F, which can be used to precipitation harden acontact after the contact is formed. While the shrinkage along theX-axis remains relatively constant at about 0.1%, the Y-axis shrinkagemonotonically increases up to about 0.19% at 120 minutes annealing time.Accordingly, since the contact arms may be patterned and etched beforean annealing process, a design pattern for contacts can be altered totake into account the absolute shrinkage that takes place and therelatively larger shrinkage along the Y-axis that would take place afterthe two dimensional contacts are patterned and heated.

In general, metallic sheet material provided for use as elastic contactsource material is subject to a rolling process that introducesanisotropy in grain microstructure that is largest as between therolling direction and the direction orthogonal to the rolling direction.This leads to anisotropic shrinkage after annealing in the case of analloy material that undergoes grain boundary precipitation of a phaseduring annealing. Even in the absence of a sheet rolling process thatintroduces an anisotropic grain structure a sheet material with auniform isotropic (within the plane of the sheet) microstructure that issubject to annealing that induces grain boundary precipitation will alsoexperience shrinkage during the annealing. In the latter case, however,the shrinkage may be equal in the X- and Y-directions within the planeof the sheet.

Thus, either isotropic or anisotropic scaling of the reference maskdesign is preferable to produce a lithography mask whose dimensions arescaled to account for the shrinkage of the contacts during annealing. Inthe example of FIG. 5, the mask design can be scaled to increase theX-dimension by about 0.1% and the Y-dimension by about 0.2% above thedesired contact size, for a contact to be annealed at about 120 minutesafter the contact shape is patterned. Accordingly, after contactpatterning (described further below), the initial oversize dimensions ofthe contact would shrink to the desired final dimensions after theannealing process.

Mask design scaling can be used to take into account additional effectsbesides the in-plane shrinkage experienced by a blanket spring sheetmaterial. For example, pattern density of etched contacts within thespring sheet can affect the overall in-plane shrinkage. Accordingly,design scaling can be modified according to pattern density effects. Ingeneral, in a first sub-step of step 305, a two dimensional contactarray design is fabricated in a spring sheet. In an experiment, thedesign can be fabricated in a series of spring sheets, where the sheetthickness and design density, among other things, is varied. Next, thepatterned spring sheet is subject to an annealing condition orconditions to be used to harden the contacts. Subsequently, theshrinkage of the spring sheet in the X- and Y-directions is measuredempirically. In an experiment, the X-Y shrinkage can be determined as afunction of material, sheet thickness, pattern density, pattern shape,and annealing conditions, among other parameters. These X- and Y-scalingfactors are then stored in a matrix that can include the material type,thickness, annealing condition, contact design and contact density. Forexample, each entry in such a matrix can contain an X- and Y-shrinkagefactor that can be applied to a reference design corresponding to thedesired final contact shape. For each entry, the size and shape of thereference design is then altered using a scaling function based on theX- and Y-shrinkage factors, using a CAD or similar program, to produce afinal mask design.

In step 306, lithographic patterning is applied to the spring sheet.This step typically comprises the substeps of applying alithographically sensitive film (“photoresist” or “resist”), exposingthe photoresist using the artwork selected in step 304, and developingthe exposed resist to leave a patterned resist layer containing openingsthat lie above regions of the spring sheet to be etched. In one example,the resist is applied to both sides of the spring sheet, such that thespring sheet can be patterned and etched from both sides. In this case,matching two dimensional patterns are formed on both sides of the springsheet so that the shape and size of the feature being etched at a givenhorizontal position on one side of the spring sheet matches the shapeand size of the feature on the other side of the spring sheet at thesame horizontal position. Dry film can be used as a resist for largerfeature sizes of about 1-20 mil, and liquid resist can be used forfeature sizes less than about 1 mil.

In step 308, the sheets are etched in a solution, for example, one thatis specifically selected for the spring sheet material being used.Cupric or Ferric Chloride etchants are commonly used in the industry foretching copper alloy and spring steels. After etching, the protectivelayer of resist is removed from the spring sheet in a stripping processthat leaves the etched features in the spring sheet. The etched featurescan comprise, for example, an array of contact features that contain twodimensional arms that lie within the plane of the spring sheet. FIGS. 6Aand 6B illustrate a perspective view of exemplary two dimensionalcontact structures (contact features) 600 and 602, respectively. It isto be noted that the two dimensional features are shown as isolatedfeatures for the purposes of clarity. However, at step 308, portions ofsuch contact features are actually integrally connected to a springsheet, at least in portions. Contact structure 602 includes aperture604, which is configured to act as an adhesive flow restrictor, asdescribed below with respect to steps 316-320.

In step 310, a spring sheet is placed onto a batch forming tool that isconfigured to form the contact features into three dimensional features.The batch forming tool can be designed based on the original artworkused to define the two dimensional contact array features. For example,the batch forming tool can be a die having three dimensional featureswhose shape, size, and spacing are designed to match the two dimensionalcontact array and impart a third dimension into the contact features.

In one variation, a male and female component of the batch forming toolis fabricated by stacking together laminated slices, for example, usingstainless steel. Each slice can be patterned by etching a pattern (forexample, with a laser) through the slice that matches thecross-sectional shape of a contact structure or array of contactstructures, as the contacts would appear when viewed along the plane ofthe interposer. For example, the cross-sectional shape can be designedto match the contact array profile as viewed along an X-direction of anX-Y contact array. To define the full die structure, the pattern of eachslice is varied to simulate the variation of the contact array profilein the X-direction as the Y-position is varied. After assembly, theslices would constitute a three dimensional die designed to accommodatethe two dimensional spring sheet and compress the two dimensionalcontacts into a third dimension. After the spring sheet is placed in thebatch forming tool, the tool acts to form the features (“flanges”) inall three dimensions to produce desired contact elements. For example,by pressing the spring sheet within an appropriately designed die, thetwo dimensional contact arms can be plastically deformed such that theyprotrude above the plane of the spring sheet after removal from the die.

In order to properly match the batch forming tool to the scaled twodimensional contact pattern, the etched pattern is scaled to match thescaled two dimensional contact array structure along a first direction,such as the X-direction. Scaling of the die in the Y-direction (thedirection orthogonal to the slices) can, but need not be, performed.Preferably, the X-direction in which the die dimensions are scaledrepresents the direction having the larger scaling factor. In somecases, the die can be designed with enough tolerance so that strictscaling in the Y-direction is not needed.

FIGS. 6C and 6D illustrate a perspective view of three dimensionalformed contact structures 610 and 612, which are based on the twodimensional precursor structures of 6A and 6B, respectively. It is to benoted that the three dimensional contacts are shown as isolated featuresfor the purposes of clarity. However, at step 310, portions of suchcontact features are actually integrally connected to a spring sheet, atleast in portions, as illustrated in FIG. 2.

FIG. 2 illustrates one example of a conductive sheet having an array ofelastic contacts formed in three dimensions according to the stepsoutlined above. Conductive sheet 200 includes contact array 202containing a plurality of three dimensional contacts 204, each having abase portion 208 and contact arm portions 206. At this stage ofprocessing the contacts of array 202 are integrally connected to sheet200 and are therefore not electrically isolated from each other. Baseportions 208 are partially etched but sufficient material remainsbetween the bases and the rest of the spring sheet to maintain thesemi-isolated contacts and sheet as a unitary structure. In otherconfigurations of the invention, no partial etch to define base portionsis performed up to step 310.

In step 312, the conductive sheets can be heat treated to precipitationharden and enhance spring properties of the contacts. As mentionedabove, this can impart higher strength, such as higher yield strength,and/or higher elastic modulus to the contact arms by, for example,precipitation hardening of a supersaturated alloy. Heat treatment can beperformed in a non-oxidizing atmosphere, such as nitrogen, inert gas, orforming gas, to prevent oxidation of the conductive sheet.

In step 314, spring sheets having three-dimensionally formed contactelements are subjected to cleaning and surface preparation. For example,an alkaline clean can be performed, followed by a sulfuricoxide/hydrogen peroxide etch (micro-etch) to enhance adhesion propertiesof the spring sheet surface for subsequent lamination processing. Themicro-etch can be used to roughen the surface, for example.

In step 315, the processes generally outlined in steps 2 and 4 of FIG. 1are performed. An interposer substrate is provided with plated viasleading from one surface to the opposite surface of the substrate.Preferably, though not necessarily, a plurality of electrical conductivepaths are provided that connect to respective conductive vias on one endand extend onto and over a portion of the surface of the substrate orwithin the substrate on the other end. For example, the plurality ofelectrical paths may simply comprise capture pads defined aroundconductive vias by etching a metal cladding layer of the substrate asdescribed above. In other cases, the conductive paths can be surface orembedded traces arranged to provide connection to elastic contactslocated at a distance from the conductive vias.

In step 316, flow restriction features are introduced into thesubstrate. These flow restriction features, discussed further below inrelation to FIGS. 7A and 7B, provide reservoirs for adhesive layers usedduring bonding of the conductive spring sheet to the substrate. Thereservoirs are located proximate to regions of the substrate thatsupport the elastic contacts and serve to retain excess adhesive andreduce the flow of adhesive material under elastic contacts. Optionally,flow restrictors can be placed in the spring sheet material near contactarms in addition to or instead of in the substrate. This preventsundesirable alteration of mechanical properties of the elastic arms thatcan render them unsuitable for use. In one variant step 316 is performedduring step 315.

In step 318, the spring sheet is bonded to a surface of a substrate. Inone example, the substrate includes a low flow adhesion material thatcovers a dielectric core. When the spring sheet and substrate are joinedtogether, an adhesive layer serves to bond the spring sheet andsubstrate. The substrate and spring sheet are pressed together undertemperature and heat conditions that can be optimized for desiredadhesion and flow based on the adhesion material. In one variant of theprocess, before placing the spring sheet and substrate together, theadhesive is placed on the bottom side of the spring sheet opposite tothe side from which the elastic contacts protrude.

After bonding, the spatial relationship between the elastic contactswithin the spring sheet and respective vias is fixed. For example,referring again to FIG. 2, array 202 can be arranged with respect to asubstrate such that contacts 204 align with conductive vias in thesubstrate. In other words, array 202 can comprise an X-Y array ofcontacts whose spacing between contacts and number of contactscorresponds to a similarly spaced array of conductive vias having asimilar number of vias as compared to the contacts. The relativedirection of array of contacts 202 can be arranged so that each contacthas the same relative position with respect to a corresponding via. Forexample, a 5×6 X-Y contact array of equally spaced contacts can bealigned on top of a 5×6 X-Y array of equally spaced conductive viashaving the same spacing as the contacts, such that the X and Ydirections of the contact array and conductive via array are the same.

After bonding, the adhesive layer is disposed between the spring sheetand substrate except in portions of the substrate such as vias. FIGS. 7Aand 7B illustrate an example of the effect of the presence of flowrestrictors on the interposer structure after step 318, in the region ofan elastic contact, for the case where the contacts are placed adjacentto conductive vias. In this case, the adhesive flow restrictors (or“flow restrictors”) are small through holes etched within a coppercladding layer on the substrate. The cladding layer shown can be aportion of a landing pad previously defined in step 315. In other cases,the flow restrictors can be partial depressions within the coppercladding layer or within the spring sheet, or through holes within thespring sheet. All such configurations serve to allow adhesive materialto flow into initially empty space defined by the flow restrictor. InFIGS. 7A and 7B having contact structures 700 and 720, respectively,contact arms 702 are joined to substrates 704 having vias 706. Thecontact arms 702 are disposed over vias 706 and joined to substrate 704using adhesion layer 708. The contact arms can be displaced downwardlyduring contact with an external component. In FIG. 7A, the presence of athrough hole 710 in the copper cladding 709 on the substrate that actsas a flow restrictor results in no discernible flow of layer 708 intovia 706. In contrast, in FIG. 7B, the absence of a relief structure(flow restrictor) results in appreciable flow of adhesion layer 712material under the base of contact arm 702. FIG. 7C illustrates anothercontact arrangement 730 having a depression 732 in the contact sheetcontaining elastic arm 702. The depression acts as another adhesive flowrestrictor in addition to hole 710. Again, no adhesive flow under thecontact arm is observed.

In one variant of the invention, in step 316, a through hole is formedin a spring sheet before bonding to a substrate, such that the throughhole receives adhesive material that is extruded from the adhesive layerduring bonding. Preferably, the spring sheet through hole is formed instep 308 when two dimensional contact features are etched, asillustrated, for example, by contact structure 602 of FIG. 6B. FIG. 7Dillustrates contact arrangement 740 having spring sheet through hole 742that is filled with extruded adhesive material from layer 708.

As illustrated in FIG. 7E, which depicts load-displacement curves ofcontact arms in substrates with (750) and without (752) flowrestrictors, the contacts not having restrictors are elastically muchstiffer, requiring greater force to displace through a given distance.

In another variant of step 318, an adhesive layer and spring sheetthrough hole is tailored to produce an extruded bump that protrudesabove the surface of the base of the spring sheet material. By properarrangement of the position of the through hole, the extruded bump canbe formed at least partially underneath a contact arm in a contact arrayformed from the spring sheet. For example, in an array of rolling beamcontacts having the configuration illustrated in FIG. 7C, an extrudedportion of layer 708 can be formed as a bump or region (see region 734)whose top surface is raised with respect to other portions of thesubstrate surface and whose raised surface lies underneath a distal end703 of contact arm 702, such that the bump acts as a hard stop forcontact arm 702 when it is displaced by contacting an externalcomponent.

In optional step 320, the process of step 318 is repeated for thesubstrate surface opposite of that used in step 318, resulting in asubstrate having spring sheets that contain contact arrays joined toopposite sides of the substrate.

The contact array can be arranged so that each contact in the array isdisposed on the interposer substrate near a respective conductive via towhich it is electrically connected, or at some distance from theconductive via.

In other configurations of the present invention, during the bondingstep of 318, the spring sheet may be joined to the interposer substratesuch that the base of contacts are not located near vias. In this case,the array of contacts formed within the spring sheet may extend overportions of the substrate that do not contain vias. During the bondingsteps 318 and 320, the array of contacts can be arranged with respect tosubstrate vias, so that contact arms of the contacts are located andextend in any desired direction with respect to vias to which therespective contact arms are to be electrically connected. Thus, becausethe contacts can be located remotely from vias, the contact arm designand length need not be constrained by the via size and via spacing. Thisfacilitates the ability to increase the beam length of a contact arm andtherefore the working range of the contacts, in comparison to contactswhose bases are formed around a via and whose distal ends are formedover vias, thereby limiting the contact arm length to the via diameter(see FIGS. 8A-C, discussed further below, for examples of the latter).

In step 322, the interposer substrate is subjected to a plating process.The plating process is used to plate desired portions of the substratesurface, which may include top and bottom surfaces, as well as vias(that may already be plated) that connect the top and bottom surfaces.This can serve to provide electrical connection, for example, betweenspring sheets disposed on opposite sides of the substrate, andtherefore, contact elements on opposite sides of the substrate. Thus,vias extending from one substrate surface to the other surface becomeplated with a conductive layer that extends to the conductive sheet.After contacts residing on one or both surfaces of the substrate aresubsequently singulated (electrically isolated by etching completelythrough the thickness the of spring sheet in a region surrounding eachcontact), the plated vias can serve as electrical connection pathsbetween designated singulated contacts disposed on opposite surfaces ofthe substrate.

Preferably, in a preliminary sub-step before plating takes place, theinterposer substrate is prepared for plating using a high pressure Al₂O₃scrub process to remove debris and roughen surfaces to be plated.

The plating process can take place in two steps. In a first step, arelatively thinner electroless plating is performed. In one variant, thefirst step includes formation of a carbon seed layer. In the secondstep, an electrolytic plating process is performed. Step 322 can beused, for example, to form a continuous conductive layer that connects aconductive via to a spring sheet that is disposed on top of an adhesivelayer separating the spring sheet from conductive layers coating thevias, which causes the contacts to be initially electrically isolatedfrom the vias, as illustrated in FIG. 9.

FIG. 9 illustrates a cross-sectional view of a portion of an interposer900, arranged according to one configuration of this invention. Thearrangement of FIG. 9 corresponds to a stage of processing after step320 and before step 322. In the portion of interposer 900 illustrated,two conductive vias 902 extend through substrate 904 from outer surface906 to outer surface 908. The terms “outer surface” or “substratesurface,” as used herein, refer to the substantially planar andrelatively flat surfaces of the interposer, also referred to as top orbottom surfaces. It will be apparent that interposer 900 can includedozens, hundreds, or thousands of conductive vias 902, which can bearranged in a two dimensional X-Y pattern, for example. Vias 902 can be,for example, cylindrical in shape. Vias 902 can be regularly spaced, butneed not be so spaced. For any X-Y array of vias, the spacing in theX-direction can differ from the spacing in the Y-direction.

Conductive vias 902 include a conductive layer 910 disposed on thevertical surface of the vias. In the exemplary interposer shown, theconductive layer 910, together with surface conductive paths 912, form acontinuous metallic layer that extends from substrate surface 906 tosubstrate surface 908.

Surface conductive paths 912 may comprise a metal cladding material andare electrically connected to via conductive layers 910. Interposer 900also includes elastic contacts 914 formed from a conductive sheet notvisible in the figure. In the configuration illustrated in FIG. 9,elastic contacts 914 are formed on both sides (top and bottom surfaces)of substrate 904. However, in other configurations, contacts 914 may beformed on a single side of substrate 904. Elastic contacts 914 includecontact arm portions 916 and base portions 918, which can be formedaccording to methods described above, and further described indiscussion to follow. Contact arms 916 are electrically coupled to baseportions 918, although not in the plane of the cross-sectionillustrated. Although the contact arms 916 are located directly abovesurface conductive paths 912, the base portion 918 of the contacts isclearly electrically isolated from the conductive paths 912 by adhesivelayer 920. Accordingly, the plating process applied in step 322 is usedto form a conductive layer that bridges the gap between layers 910, 912and contacts 914. In so doing, a continuous path can be formed betweenpairs of contacts 914 disposed on opposite sides of the substrate.

FIG. 10 illustrates a contact structure 1020 after formation of aconductive path 1022 between a contact 1024 and conductive via 1026,according to one aspect of this invention.

In step 324, a photoresist material is applied to the substratecontaining the spring sheet(s) and the resist layer is patterned todefine individual contact elements within a spring sheet. In otherwords, the resist layer is patterned such that desired portions of thespring sheet between contact arms are unprotected by resist, while thecontact arms and nearby portions are protected by the resist afterdevelopment. In the case of a substrate with spring sheets applied onboth surfaces, this step is performed for both substrate sides.

In step 326, an etch is performed that completely removes exposedportions of the spring sheet(s), such that individual contacts within aspring sheet become electrically isolated from each other (singulated).The contacts remain affixed to the substrate by a base portion definedin the singulation patterning process, such that the base portion (aswell as contact arm(s)) is covered with resist during the etch. Asdescribed above, this process can also define conductive paths in thespring sheet material that lead from contacts to vias.

The singulated contacts are thus isolated from other contacts and fromthe spring sheet material, but can remain electrically connected torespective conductive vias through previous step 322.

If the singulated contacts are to be electrically connected to vias thatdo not lie underneath the contacts, the pattern of the exposed anddeveloped resist layer can include remaining resist portions that defineconductive paths from the contact base regions to the vias. For example,a patterned spring sheet can include holes having the approximate shapeand size of vias and that are placed over vias when the spring sheet isbonded to a substrate. The spring sheet material would thus extend tothe edge of the vias and can be connected to the conductive vias duringstep 322. During singulation of contacts contained within the springsheet and located at a distance from the holes, the base portions can beisolated from other contacts by etching the spring sheet materialimmediately surrounding the portion of the spring sheet that is toconstitute the contact base. However, a portion of the spring sheet canbe protected during the singulation step that defines a path from thebase portion to a conductive via, thus linking the base to theconductive via.

In a variant in which base portions of singulated contacts are to beconnected to the ends of conductive paths formed on the surface of theinterposer substrate underneath the adhesive layer, selected regions ofthe adhesive layer adjacent to the contact base can be removed to exposethe conductive trace, and a subsequent plating process used to connectthe trace to the base contact.

After removal of resist, in step 328, an electroless plating process isperformed to finish the contact elements. The electroless platingincludes, for example, a Ni/Au stack (soft gold). The electrolessplating is designed to add a coating layer to the contacts. Thus, in oneconfiguration of the present invention, as illustrated in FIG. 11, theelastic contact arms 1102 contain an elastic core 1104, such as Be—Cu,typically 1-3 mils in thickness, which is coated in succession by platedCu layer 1106 and Ni—Au layer 1108, having typical thicknesses in therange of 0.3-0.5 mils and 0.05-0.15 mils, respectively. The plated Cuand Ni—Au layers are preferably of a thickness that does notsubstantially degrade the elastic properties of the contact arms.

In step 330, a coverlay is applied to the substrate having the array ofisolated elastic contacts. The coverlay is a thin, semi-rigid material,for example, a bilayer material comprising an acrylic adhesive layerthat faces and forms a bond to the substrate, and an upper layer, suchas Kapton. The coverlay material is designed to encapsulate the contactsin regions adjacent to the contact arms. FIG. 12 illustrates a contactstructure 1200 that includes coverlay 1202 on contact 1204.

The coverlay is preferably provided with holes that can be matched tothe underlying substrate, such that the coverlay material does notextend substantially over contact arms of a contact or over viasprovided in the substrate. The coverlay material can extend over thebase portion of contacts up to the region where the elastic contactrises from the plane of the interposer substrate surface. By exactpositioning of the end of the coverlay opening, the amount ofcounterforce from the coverlay layer acting on the contact arm can bemodified such that the distal end of the contact arm is retained at afurther distance above the substrate surface than without the coverlaypresent. The coverlay acts to provide a force to restrain the base ofthe contact when a force is applied to the contact arm, preventingrotation of the contact and separation from the substrate. Thisrestraining force has the additional effect of retaining the distal endof the contact at a further distance above the surface of the substrate,which can increase the contact working distance on the order of 10% orso for contacts in the size range of about 40 mils.

As depicted in FIG. 3B, according to a different aspect of the presentinvention, exemplary steps involved are the same as those outlined inFIG. 3A up to and including step 324.

In step 350, a partial etch of the spring sheet is performed. The etchis performed such that a large portion of the spring sheet material isremoved, wherein the contacts are nearly singulated. For example, therelative depth of the etched portions of the spring sheet can be 40-60%of the spring sheet thickness.

In step 352, the resist is stripped.

In step 354, resist is reapplied to the spring sheet(s) and the resistis patterned such that only the previously etched (exposed) portions ofthe substrate are masked after exposure and development.

In step 356, the substrate is exposed to an electrolytic platingprocess, such as a Cu/Ni/Au (hard gold) process. This serves to coatcontact arms and portions of contacts near the contact arms that wereexposed after resist development.

In step 358, the resist is removed to expose previous partially etchedscribe lines.

In step 360, the interposer substrate is subjected to an etch, with theelectrolytic Ni/Au that coats the contact arms and adjacent areas actingas a protective hard mask, such that the regions between contactscontaining thin layers of spring sheet are completely removed, resultingin singulated contacts.

In step 362, a coverlay material is applied.

FIG. 13 illustrates exemplary steps involved in a method for forming anarray connector, according to another aspect of this invention. Thesteps outlined in FIG. 13 are useful, for example, for fabricatingsingle sided array connectors. The array connectors fabricated inaccordance with the process of FIG. 13 can be formed on non-metallicsubstrates, such as a PCB board, a silicon wafer, or a ceramicsubstrate. The term “non-metallic substrates,” as used herein, refers tosubstrates that are poor electrical conductors or electrical insulators,and can include semiconductor substrates as well as electricallyinsulating substrates.

The method that is outlined generally in FIG. 13, and disclosed inseveral variations with respect to FIGS. 14A-17H discussed below,facilitates fabrication of elastic contact arrays having contact sizeand pitch on the scale of microns or tens of microns, as opposed to themillimeter scale of present day connectors having elastic contacts.Advances in semiconductor technologies have led to shrinking dimensionswithin semiconductor integrated circuits and particularly, decreasingpitch for the contact points on a silicon die or a semiconductorpackage. The pitch, that is, the spacing between each electrical contactpoint (also referred to as a “lead”) on a semiconductor device isdecreasing dramatically in certain applications. For example, contactpads on a semiconductor wafer can have a pitch of 250 microns (10 mils)or less. At the 250-micron pitch level, it is very difficult andprohibitively expensive to use conventional techniques to make separableelectrical connections to these semiconductor devices. The problem isbecoming even more critical as the pitch of contact pads on asemiconductor device decreases below 50 microns and simultaneousconnection to multiple contact pads in an array is required.

In step 1300, a non-conducting substrate is provided with a plurality ofthree dimensional support structures on a surface of the substrate.Details of an exemplary process used for forming the three dimensionalsupport structures are disclosed in the discussion to follow withrespect to FIGS. 14A-17H. In one example in which the substrate is asilicon wafer, the three dimensional support structures can be formed bydepositing a blanket support layer, lithographically patterning thesupport layer, and selectively removing portions of the support layer.The remaining portions of the support layer form three dimensionalsupport features that can be used to define the elastic contacts.Because semiconductor lithography processes using fine featured maskscan be employed in the step of patterning the support layer, the threedimensional support features can have lateral dimensions on the order ofmicrons or smaller. Accordingly, contact arms that are in part definedby the support features can be fabricated having dimensions similar tothe support features.

However, the process of step 1302 can also be used in conjunction withPCB-type substrates provided, for example, with conductive vias. Thescale of three dimensional support features arranged on a PCB-typesubstrate can be tailored toward the appropriate contact size to be usedon the PCB substrate.

In step 1302, a conductive elastic contact precursor layer is depositedon the substrate provided with the support features. The term“conductive elastic contact precursor layer” refers to a metallicmaterial that is generally formed as a layer on top of the substrate,and typically is at least partially conformal, such that a continuouslayer is formed on flat parts of the substrate, as well as on the threedimensional support features. The term “precursor” is used to indicatethat the metallic layer is a precursor to the final elastic contacts, inthat the final elastic contacts are formed from the metallic layer. Themechanical properties of the metallic precursor layer are such that thedesired elastic properties can be obtained once contact arms are formed.The metallic layer can be, for example, a Be—Cu alloy.

In step 1304, the metallic layer is patterned to form supported elasticcontact structures. The term “supported elastic contact structures”refers to the fact that such structures have the general shape and sizeof the final elastic contacts of the contact array, but are notfree-standing. In other words, at least portions of the contact arms aredisposed on top of the support structures and are not free to move. Themetallic layer patterning that forms the elastic contact supportstructures may also be used to singulate the contact structures. In thiscase, as in the case of singulation of spring sheets described above,individual contact structures are electrically isolated from othercontact structures by removing at least portions of the metallic layerbetween the elastic contacts.

In step 1306, the support structures are selectively removed, leaving anarray of three dimensional contacts having contact arms that extendabove the substrate surface, and whose shape is in part defined by theremoved three dimensional support structures.

Many variations of the above method are possible, as described below.For example, substrates can be provided with internal conductive pathsthat form circuits that connect to the elastic contacts on the substratesurface. Additional conductive layers can be provided on the substratebelow the support layer that serve to extend base portions of thecontacts.

According to another aspect of the present invention, a method forforming a connector having an array of contact elements includesproviding a substrate, forming a support layer on the substrate,patterning the support layer to define an array of support elements,isotropically etching the array of support elements to form roundedcorners on the top of each support element, forming a metal layer on thesubstrate and on the array of support elements, and patterning the metallayer to define an array of contact elements where each contact elementincludes a first metal portion on the substrate and a second metalportion extending from the first metal portion and partially across thetop of a respective support element. The method further includesremoving the array of support elements. The array of contact elementsthus formed each includes a base portion attached to the substrate and acurved spring portion extending from the base portion and having adistal end projecting above the substrate. The curved spring portion isformed to have a concave curvature with respect to the surface of thesubstrate.

According to another aspect of the present invention, a method forforming a connector including an array of contact elements includesproviding a substrate, providing a conductive adhesion layer on thesubstrate, forming a support layer on the conductive adhesion layer,patterning the support layer to define an array support elements,isotropically etching the array of support elements to form roundedcorners on the top of each support element, forming a metal layer on theconductive adhesion layer and on the array of support elements,patterning the metal layer and the conductive adhesion layer to definean array of contact elements. Each contact element includes a firstmetal portion formed on a conductive adhesion portion and a second metalportion extending from the first metal portion and partially across thetop of a respective support element. The method further includesremoving the array of support elements.

FIGS. 14A to 14H illustrate the processing steps for forming a connectorcontaining an array of elastic contacts, according to one aspect of thepresent invention. Referring to FIG. 14A, a substrate 102 on which thecontact elements are to be formed is provided. Substrate 102 can be asilicon wafer or ceramic wafer for example and may include a dielectriclayer formed thereon (104). As described above, a dielectric layer ofSOS, SOG, BPTEOS, or TEOS layer can be formed on substrate 102 forisolating the contact elements from substrate 102. Then, a support layer104 is formed on substrate 102. Support layer 104 can be a depositeddielectric layer, such as an oxide or nitride layer, a spin-ondielectric, a polymer, or any other suitable etchable material. In oneconfiguration, support layer 104 is deposited by a chemical vapordeposition (CVD) process. In another configuration, support layer 104 isdeposited by a plasma vapor deposition (PVD) process. In yet anotherconfiguration, support layer 104 is deposited by a spin-on process. Inyet another configuration, when substrate 102 is not covered by adielectric layer or a conductive adhesive layer, the support layer canbe grown using an oxidation process commonly used in semiconductormanufacturing.

After the support layer 104 is deposited, a mask layer 106 is formed onthe top surface of support layer 104. Mask layer 106 is used inconjunction with a conventional lithography process to define a patternon support layer 104 using mask layer 106. After the mask layer isprinted and developed (FIG. 14B), a mask pattern, including regions 106Ato 106C, is formed on the surface of support layer 104 defining areas ofsupport layer 104 to be protected from subsequent etching.

Referring to FIG. 14C, an anisotropic etching process is performed usingregions 106A to 106C as a mask. As a result of the anisotropic etchingprocess, support layer 104 not covered by a patterned mask layer isremoved. Accordingly, support regions 104A to 104C are formed. The maskpattern including regions 106A to 106C is subsequently removed to exposethe support regions (FIG. 14D).

Referring to FIG. 14E, support regions 104A to 104C are then subjectedto an isotropic etching process. An isotropic etching process removesmaterial under etch in the vertical and horizontal directions atsubstantially the same etch rate. Thus, as a result of the isotropicetching, the top corners of support regions 104A to 104C are rounded offas shown in FIG. 14E. In one configuration, the isotropic etchingprocess is a plasma etching process using SF6, CHF₃, CF₄ or other wellknown chemistries commonly used for etching dielectric materials. In analternate configuration, the isotropic etching process is a wet etchprocess, such as a wet etch process using a buffered oxide etch (BOE).

Then, referring to FIG. 14F, a metal layer 108 is formed on the surfaceof substrate 102 and the surface of support regions 104A to 104C. Metallayer 108 can be a copper layer or a copper-alloy (Cu-alloy) layer or amultilayer metal deposition such as Tungsten coated withCopper-Nickel-Gold (Cu/Ni/Au). In a preferred configuration, the contactelements are formed using a small-grained copper-beryllium (CuBe) alloyand then plated with electroless Nickel-Gold (Ni/Au) to provide anon-oxidizing surface. Metal layer 108 can be deposited by a CVDprocess, by electro plating, by sputtering, by physical vapor deposition(PVD) or using other conventional metal film deposition techniques. Amask layer is deposited and patterned into mask regions 110A to 110Cusing a conventional lithography process. Mask regions 110A to 110Cdefine areas of metal layer 108 to be protected from subsequent etching.

Then, the structure in FIG. 14F is subjected to an etching process forremoving metal layer not covered by mask regions 10A to 110C. As aresult, metal portions 108A to 108C are formed as shown in FIG. 14G.Each of metal portions 108A to 108C includes a base portion formed onsubstrate 102 and a curved spring portion formed on a respective supportregion (104A to 104C). Accordingly, the curved spring portion of eachmetal portion assumes the shape of the underlying support region,projecting above the substrate surface and having a curvature thatprovides a wiping action when engaging a contact point.

To complete the connector, support regions 104A to 104C are removed(FIG. 14H), such as by using a wet etch or an anisotropic plasma etch orother etch process. If the support layer is formed using an oxide layer,a buffered oxide etchant can be used to remove the support regions. As aresult, free standing contact elements 112A to 112C are formed onsubstrate 102.

One of ordinary skill in the art, upon being apprised of the presentinvention, would appreciate that many variations in the above processingsteps are possible to fabricate the connector of the present invention.For example, the chemistry and etch condition of the isotropic etchingprocess can be tailored to provide a desired shape in the supportregions so that the contact elements thus formed have a desiredcurvature. Thus, because contact properties can be altered by changingthe contact shape, the processing steps describe above provide a methodfor tailoring contact properties by facilitating the ability to etchcontact elements to obtain desired shapes. Furthermore, one of ordinaryskill in the art would appreciate that through the use of semiconductorprocessing techniques, a connector can be fabricated with contactelements having a variety of properties. For example, a first group ofcontact elements can be formed with a first pitch while a second groupof contact elements can be formed with a second pitch greater or smallerthan the first pitch. Other variations in the electrical and mechanicalproperties of the contact element are possible, as will be described inmore detail below.

FIGS. 15A to 15H illustrate the processing steps for forming a connectoraccording to one configuration of the present invention. The processingsteps shown in FIGS. 15A to 15H are substantially the same as theprocessing steps shown in FIGS. 14A to 14H. However, FIGS. 15A to 15Hillustrate that different configuration of contact elements can befabricated by using suitably designed mask patterns.

Referring to FIG. 15A, a support layer 124 is formed on a substrate 122.A mask layer 126 is formed on the support layer for defining maskregions for forming the connector. In the present configuration, maskregions 126A and 126B (FIG. 15B) are positioned close together to allowa contact element including two curved spring portion to be formed.

After an isotropic etching process is performed using mask regions 126Aand 126B as mask, support regions 124A and 124B are formed (FIG. 15C).The mask regions are removed to expose the support regions (FIG. 15D).Then, support regions 124A and 124B are subjected to an isotropicetching process to shape the structures so that the top surface of thesupport regions includes rounded corners (FIG. 15E).

A metal layer 128 is deposited over the surface of substrate 122 andover the top surface of support regions 124A and 124B (FIG. 15F). A maskpattern, including regions 130A and 130B, is defined on metal layer 128.After metal layer 128 is etched using mask regions 130A and 130B asmask, metal portions 128A and 128B are formed (FIG. 15G). Each of metalportions 128A and 128B includes a base portion formed on substrate 122and a curved spring portion formed on the respective support region(124A or 124B). The curved spring portion of each metal portion assumesthe shape of the underlying support region, projecting above thesubstrate surface and having a curvature that provides a wiping actionwhen engaging a contact point. In the present configuration, the distalends of metal portions 128A and 128B are formed facing each other. Tocomplete the connector, support regions 124A to 124B are removed (FIG.15H). As a result, a free standing contact element 132 is formed onsubstrate 102. In the cross-sectional view of FIG. 15H, the two metalportions of contact element 132 appear to be unconnected. However, inactual implementation, the base portions of the metal portions areconnected such as by forming a ring around the contact element or thebase portions can be connected through conductive layers formed insubstrate 122.

FIGS. 16A to 16H illustrate the processing steps for forming aconnector, according to an alternate configuration of the presentinvention. Referring to FIG. 16A, a substrate 142 including predefinedcircuitry 145 is provided. Predefined circuitry 145 can includeinterconnected metal layers or other electrical devices, such ascapacitors or inductors, which are typically formed in substrate 142. Inthe present configuration a top metal portion 147 of circuitry 145 isexposed at the surface of substrate 142. Top metal portion 147 is formedat the top surface of substrate 142 to be connected to the contactelement to be formed. To form the desired contact element, a supportlayer 144 and a mask layer 146 are formed on the top surface ofsubstrate 142.

The processing steps proceed in a similar manner as described above withreference to FIGS. 15A to 15H. Mask layer 146 is patterned (FIG. 16B)and support layer 144 is etched accordingly to form support regions 144Aand 144B (FIG. 16C). The mask regions are removed to expose the supportregions (FIG. 16D). Then, an isotropic etching process is carried out toround out the top corners of support regions 144A and 144B (FIG. 16E). Ametal layer 148 is deposited on the surface of substrate 142 and overthe support regions (FIG. 16F). Metal layer 148 is formed over top metalportion 147. As a result, metal layer 148 is electrically connected tocircuit 145.

Metal layer 148 is patterned by a mask layer 150 (FIG. 16F) andsubjected to an etching process. Metal portions 148A and 148B are thusformed (FIG. 16G) having distal ends pointing towards each other.Support portions 144A and 144B are removed to complete the fabricationof contact element 152 (FIG. 16H).

As thus formed, contact element 152 is electrically connected to circuit145. In the manner, additional functionality can be provided by theconnector of the present invention. For example, circuit 145 can beformed to electrically connect certain contact elements. Circuit 145 canalso be used to connect certain contact elements to electrical devicessuch as a capacitor or an inductor formed in or on substrate 142.

Fabricating contact element 152 as part of an integrated circuitmanufacturing process provides further advantages. Specifically, acontinuous electrical path is formed between contact element 152 and theunderlying circuit 145. There is no metal discontinuity or impedancemismatch between the contact element and the associated circuit. In someprior art connectors, a gold bond wire is used to form the contactelement. However, such a structure results in gross material andcross-sectional discontinuities and impedance mismatch at the interfacebetween the contact element and the underlying metal connections,resulting in undesirable electrical characteristics and poor highfrequency operations. The contact element of the present invention doesnot suffer from the limitations of the conventional connector systemsand a connector built using the contact elements of the presentinvention can be used in demanding high frequency and high performanceapplications. In particular, the present invention provides connectorsthat do not have pin-type connection elements that can act as antennaduring transmission of electrical signals at high frequency.Additionally, the unitary structure of elastic contacts wherein base andelastic portions are formed from a common sheet reduces the electricalimpedance mismatch along the conductive path of a connector, therebyimproving the high frequency performance.

FIGS. 17A to 17H illustrate the processing steps for forming an array ofconnectors according to an alternate configuration of the presentinvention. Like elements in FIGS. 14A to 14H and 17A to 17H are givenlike reference numerals to simplify the discussion. Contact elements ofa connector fabricated according to the steps outlined in FIGS. 17A-Hinclude a conductive adhesion layer in the base portion of the contactelement for improving the adhesion of the contact element to thesubstrate.

Referring to FIG. 17A, a substrate 102 on which the contact elements areto be formed is provided. Substrate 102 can be a silicon wafer orceramic wafer and may include a dielectric layer formed thereon (notshown in FIG. 17A). A conductive adhesion layer 103 is deposited onsubstrate 102 or on top of the dielectric layer if present. Conductiveadhesion layer 103 can be a metal layer, such as copper-beryllium (CuBe)or titanium (Ti), or a conductive polymer-based adhesive, or otherconductive adhesive. Then, a support layer 104 is formed on the adhesionlayer 103. Support layer 104 can be a deposited dielectric layer, suchas an oxide or nitride layer, a spin-on dielectric, a polymer, or anyother suitable etchable material.

After the support layer 104 is deposited, a mask layer 106 is formed onthe top surface of support layer 104. Mask layer 106 is used inconjunction with a conventional lithography process to define a patternon support layer 104 using mask layer 106. After the mask layer isprinted and developed (FIG. 17B), a mask pattern, including regions 106Ato 106C, is formed on the surface of support layer 104 defining areas ofsupport layer 104 to be protected from subsequent etching.

Referring to FIG. 17C, an anisotropic etching process is performed usingregions 106A to 106C as a mask. As a result of the anisotropic etchingprocess, portions of support layer 104 not covered by a patterned masklayer are removed. The anisotropic etching process stops on conductiveadhesion layer 103 or partially in conductive adhesion layer 103. Thus,conductive adhesion layer 103 remains after the anisotropic etchprocess. Accordingly, support regions 104A to 104C are formed on theconductive adhesion layer. The mask pattern including regions 106A to106C is subsequently removed to expose the support regions (FIG. 17D).

Referring to FIG. 17E, support regions 104A to 104C are then subjectedto an isotropic etching process. An isotropic etching process removesmaterial under etch in the vertical and horizontal directions atsubstantially the same etch rate. Thus, as a result of the isotropicetching, the top corners of support regions 104A to 104C are rounded offas shown in FIG. 17E.

Then, referring to FIG. 17F, a metal layer 108 is formed on the surfaceof conductive adhesion layer 103 and the surface of support regions 104Ato 104C. Metal layer 108 can be a copper layer or a copper-alloy(Cu-alloy) layer or a multilayer metal deposition such as Tungstencoated with Copper-Nickel-Gold (Cu/Ni/Au). In a preferred configuration,the contact elements are formed using a small-grained copper-beryllium(CuBe) alloy and then plated with electroless Nickel-Gold (Ni/Au) toprovide a non-oxidizing surface. Metal layer 108 can be deposited by aCVD process, by electro plating, by sputtering, by physical vapordeposition (PVD) or using other conventional metal film depositiontechniques. A mask layer is deposited and patterned into mask regions110A to 110C using a conventional lithography process. Mask regions 110Ato 110C define areas of metal layer 108 to be protected from subsequentetching.

Then, the structure in FIG. 17F is subjected to an etching process forremoving portions of metal layer and conductive adhesion layer notcovered by mask regions 110A to 110C. As a result, metal portions 108Ato 108C and conductive adhesion portions 103A to 103C are formed asshown in FIG. 17G. Each of metal portions 108A to 108C includes a baseportion formed on a respective conductive adhesion portion and a curvedspring portion formed on a respective support region (104A to 104C).Accordingly, the curved spring portion of each metal portion assumes theshape of the underlying support region, projecting above the substratesurface and having a curvature that provides a wiping action whenengaging a contact point. The base portion of each metal portion isattached to a respective conductive adhesion portion which functions toenhance the adhesion of each base portion to substrate 102.

To complete the connector, support regions 104A to 104C are removed(FIG. 17H), such as by using a wet etch or an anisotropic plasma etch orother etch process. If the support layer is formed using an oxide layer,a buffered oxide etchant can be used to remove the support regions. As aresult, free standing contact elements 112A to 112C are formed onsubstrate 102. As thus formed, each of contact elements 112A to 112Ceffectively includes an extended base portion. As shown in FIG. 17H,each conductive adhesion portion serves to extend the surface area ofthe base portion to provide more surface area for attaching the contactelement to substrate 102. In this manner, the reliability of the contactelements can be improved.

As one of ordinary skill in the art would appreciate, some details ofthe process flows outlined in FIGS. 14A-17H can be tailored according tothe type of substrate used for the connector. For example, theprocessing temperature used for layers deposited on the contact arraysubstrate can be adjusted according to the ability of a substrate towithstand high temperature processing. Similarly, the type of depositionprocess can be chosen to have maximum compatibility with the substratetype. For example, deposition processes that do not require high vacuumenvironments would be preferred for substrates that have very highoutgassing rates.

Generally speaking, configurations of the present invention provide ascalable, low cost, reliable, compliant, low profile, low insertionforce, high-density, separable and reconnectable electrical connectionfor high speed, high performance electronic circuitry andsemiconductors. The electrical connection can be used, for example, tomake electrical connections from one PCB to another PCB, MPU, NPU, orother semiconductor device.

In one configuration of the invention, a connection system includes abeam land grid array (BLGA). The electrical and mechanical functionalityof the BLGA lends itself to numerous applications in the electronicsspace. It allows for short interconnections to be established betweenalmost any electrical contact surfaces, thus maintaining high electricalperformance. Some suitable applications include test, burn-in,prototyping, and full wafer burn-in applications, which require highelectrical performance. Optimized electrical, thermal, and mechanicalproperties are realized by the use of the BLGA electrical contactelements.

In one configuration of this invention, there is provided a separableand reconnectable contact system for electronically connecting circuits,chips, boards, and packages together. The system is characterized by itselastic functionality across the entire gap of separation between thecircuits, chips, boards, or packages being connected, i.e., across thethickness of the connection system. The invention includes a beam landgrid array (BLGA) configuration but is not limited to that particularstructural design.

An exemplary array according to one configuration of the invention isillustrated in FIG. 18A. Contact arms 15 are fabricated in carrier layer17. Different design patterns for the contact arms 15 are respectivelyillustrated by elements 15 a, 15 b, 15 c, and 15 d in FIG. 18B.

In FIG. 19, carrier 17 is shown making contact with the pad 22 of PCB 20by means of BLGA contact wipers 24, similar to the contact arms 15 atthe top of the carrier.

FIG. 20 depicts angled plan views 15A and 15B of exemplary contact armdesigns for a BLGA system according to two different configurations ofthis invention.

Referring to FIG. 21, a plurality of contact arm designs are shown for aBLGA system. Like those mentioned, these contact patterns can also beused to fabricate spring-like (elastic) contact structures in a contactarray device such as an interposer or BLGA, according to processesdescribed further below. A typical material used for the elasticcontacts is Be/Cu.

Referring again to FIGS. 8A and 8B, enlarged top and side views of oneexemplary version of contact elements 15 are illustrated.

Referring to FIG. 8C, a sectional, an enlarged view of an exemplary setof contact elements 15 for a BLGA or interposer system is shown. Theelements can be etched into a sheet of beryllium-copper, for example.Beryllium copper (BeCu) alloys have high strength and good elasticproperties. In other words, BeCu can be elastically deformed over asignificant range without substantial plastic flow. The BeCu alloy canbe formed by precipitation hardening processes, wherein Be-richprecipitates form within a Cu-rich matrix. This can occur, for example,during slow cooling from high temperature, which can cause a Be-richphase to precipitate from a Cu matrix due to decreased solubility of theBe at lower temperatures. Accordingly, in one configuration of thisinvention, contact elements 15 comprising a BeCu alloy can beelastically displaced over a large range in a repeated fashion withoutundergoing plastic deformation.

FIG. 22 illustrates a top schematic view of a contact arranged inaccordance with another configuration of this invention. In thisarrangement, contact 2202 includes two spiral shaped contact arms 2204.

Referring to FIGS. 23 and 24, a clamping mechanism 30 is shown insectional and top views, respectively. The contact system arranged inaccordance with configurations of this invention is depicted as aninterposer 32, which is clamped between a PCB 20 and a package 22 thatis to be attached by placing the assembly between a top plate 34 and abacking plate 36, which are screwed together or otherwise compressedtogether.

The contact systems arranged according to different configurations ofthis invention can be used with high frequency semiconductor devices oralmost any type of electrical interface including, but not limited to:BGA, CSP, QFP, QFN, and TSOP packages.

Compared to stamped, formed, or coiled springs, a contact system of thepresent invention provides greater elasticity, without limitingelectrical properties. The system is readily scalable to small pitch andsmall inductance, whereas pogo pins, and nano-springs are very limitedin this regard.

Compared with polymer-based and dense metal systems, a contact system ofthe present invention is not limited in its mechanical properties,durability, contact force, and working range, while providing goodelectrical properties.

The contact system of this invention is characterized by its elasticfunctionality across the entire gap between the electrical devices to beconnected, i.e., from device contact to device contact. Thus, inaccordance with one configuration of this invention, a double sidedconnector arranged has an array of elastic contacts disposed on eachside of the connector substrate. Both contact arrays, when engagingrespective external components on the respective opposite sides of theconnector substrate, can be displaced elastically over an entire rangeof movement available to the elastic contact arms of the contacts.

Referring to FIG. 25, a graph of load versus displacement for BLGAattachment systems of this invention is illustrated. FIG. 25 illustratesthe concept of working range. The load versus displacement curve (lowerhysteresis curve) illustrates that the contact has elastic behaviorduring insertion (the displacing downwardly of a contact arm by anexternal component) over a range from about 6.5 to 14 mils. Theresistance versus displacement curve indicates that the insertionresistance is below about 60 mOhm between about 7 and 14 milsdisplacement. For purposes of this example, if the acceptable electricalresistance for the contact is determined to be 60 mOhm or lower, then aworking range, defined for this example as a displacement range duringcontact insertion in which the contact behaves elastically and exhibitsresistance of 60 mOhm or less, is about 7 mils (the range between 7 and14 mils over which the contact is both elastic and has resistance belowthe defined acceptable limit).

Typical mechanical and electrical characteristics for the contacts ofthis invention include a large working range greater than 5 mils, a lowcontact force less than 30 g, wiping action having both horizontal andvertical components for reliability, high durability greater than twohundred thousand cycles, high temperature operability greater than 125°C., good elasticity, low inductance less than 0.5 nH, high currentcapacity greater than 1.5 A, a small scalable pitch less than 20 mils,and a functional elasticity across the entire gap separating the twodevices, boards, or substrates to be electrically connected.

In one configuration of this invention, the elasticity range for acontact is approximately between 0.12 mm and 0.4 mm for a size range forthe flange springs of between approximately 0.12 mm and 0.8 mm. Thus,the elasticity to size ratio is in the approximate range of between 0.5and 1.0. This ratio is a measure of the relative distance in which acontact arm can be elastically displaced as compared to the length ofthe elastic contact arm (flange spring).

In accordance with other configurations of this invention, the contactstructures 15 shown generally in FIGS. 8A-C can be formed by theprocesses outlined in FIGS. 17A and 17B. The contacts include one ormore arrays of elastically deformable contacts, wherein the elasticallydeformable contacts are integrally formed from a metallic sheet, forexample, a Cu alloy sheet. The alloy material of the metallic sheet isconfigured to provide high elasticity, such that highly elastic contactarms can be fabricated therefrom. The term “highly elastic,” as usedherein with respect to contacts, refers to contacts that can berepeatedly displaced without significant plastic flow (that is, withoutsurpassing a mechanical yield stress (or strain)) over the range ofmechanical displacement that takes place during connection to externalcomponents. Accordingly, an interposer formed from the array ofdeformable elastic contacts can be connected and disconnected multipletimes to a substrate without degradation in mechanical or electricalperformance.

For example, an interposer fabricated according to one configuration ofthis invention, and substantially similar to that shown in FIG. 8C, mayhave an array of elastic contacts with a working range of 15 mil on oneor both sides of the interposer. When connecting to a substrate, such asa PCB board, the array of contacts can accommodate a variation inrelative height of up to about 15 mil for points of contact where eachcontact of the array of contacts comes into contact with a correspondingconductive features of the PCB. In other words, a first contact (orcontact element) at a point P1 in an array can contact a conductivefeature of a PCB board having a relative height H1, while a secondcontact at point P2 of the array can contact a conductive feature of thePCB board having a relative height H1-12 mil.

Thus, by the time electrical contact is established at point P2, thecontact at point P1 may be elastically displaced by about 12 mils, thatis, one or more of the contact arms displaced downwardly toward theplane of the interposer by about 12 mils. However, because the contactsare fabricated from a highly elastic sheet, upon removal from contactingthe PCB, the contact arm at point P1 can return to the same relativeheight with respect to the interposer surface as compared to beforeinitial contact with the PCB board. The interposer can thus bedisconnected from the PCB board and reconnected without a substantialreduction in working range, thus extending the usefulness of theinterposer to applications in which disconnection and reconnection maybe performed multiple times. FIG. 26 illustrates a load-displacementbehavior for an exemplary contact fabricated in accordance with thepresent invention, illustrating a highly elastic response over repeatedmeasurements.

FIGS. 27A-D illustrate alternative configurations of interposers in planview that can be formed according to the steps outlined in FIGS. 1, 3A,and 3B. Interposers 2700A-D include conductive vias 2702 that extendthrough respective insulating substrates 2704A-D. Contact arms 2706project above the plane of respective substrates 2704A-D, in a fashionsimilar to that shown in FIG. 9 for contacts 914. An annular shapedconductive path 2714 surrounds each conductive via 2702 on the surfaceof the substrate, similar to conductive path 912 of FIG. 9. Contact baseportions 2708, in turn, make electrical contact with conductive paths(horizontal traces) 2714. The paths 2714 can be, for example, portionsof a pre-existing metal cladding that are not covered with an adhesivelayer in the regions surrounding the via (see FIG. 9). Conductive paths2714 can be formed by selective plating the regions immediatelysurrounding vias. In FIG. 27A, contact arms 2706 extend over thecorresponding conductive vias 2702 to which they are connected byconductive paths 2714. As compared to contacts illustrated in FIGS.18A-21 and 8A-C, which generally are centered over vias, thearrangements of contacts illustrated in FIGS. 27A-D afford the abilityto make much longer contact arms for a given array pitch. This isbecause, as illustrated in FIGS. 18A-21 and 8A-C, the length of contactarms centered over a via is generally comparable to or smaller than thevia diameter, whereas the contact arms illustrated in FIGS. 27A-D haveportions that extend over planar portions of their respective substrates(that is, not over the vias) so that their length can be much largerthan the via diameter, often comparable to the via separation (pitch).

FIG. 27B illustrates a configuration in which contact arms 2706 do notextend over conductive vias 2702. Conductive paths 2714 include anL-shaped portion extending from the annular portion that serves toelectrically connect contact bases 2708 and respective conductive vias2702.

FIG. 27C illustrates a configuration in which contact arms 2706 extendfrom their respective base portions away from conductive vias 2702 towhich they are electrically connected. In addition, the longitudinaldirection of contact arms 2706 extends at about a 45 degree angle (froma plan-view perspective) with respect to “X” and “Y” directions of theconductive via array. This allows contact arms 2706 to extend a furtherdistance without extending over conductive vias 2702, than if thecontacts were oriented between vias along an X- or Y-direction. Thus, ifthe array pitch is defined as the distance along the X- or Y-directionsbetween nearest neighbors (the array pitch in this case is the same foreither contacts or vias), the contact length can actually exceed thearray pitch, since the diagonal distance along a square array is afactor of 1.41 times the array pitch. For other orthogonal arrays(rectangular arrays), having two different pitches corresponding tomutually orthogonal directions, the length of the diagonal also exceedsthe length of the longer of the two array pitches. Thus, inconfigurations of this invention, a contact arm length can be increasedby orienting the arm at an angle with respect to X- or Y-axes of anarray.

Thus, referring again to FIG. 27B, in one variation of the method ofFIG. 1, conductive paths 2714 that comprise annular conductive portionssurrounding conductive vias are formed in step 2. In the bonding step 8,a spring sheet containing non-singulated contacts is placed on substrate2704B, such that continuous portions of the spring sheet extend fromeach contact to a conductive path 2714 of a via 2702. After contactsingulation in step 12, conductive paths 2712 that extend betweencontact bases 2708 and vias 2702, are formed by etching the spring sheetin the shape of the conductive path 2712 and base 2708. As noted above,the blanket spring sheet containing unsingulated contacts can bepreviously electrically connected to the via by electroplating regionssurrounding the via to join the via and spring sheet across theinsulating adhesive layer.

Contact arm 2706 and conductive path 2712 normally comprise the samespring sheet material. Thus, during patterning of a resist layer used todefine singulated contacts, contact arms 2706, base portions 2708, andconductive paths 2712 would be covered with resist after exposure anddevelopment, and remain unetched during the etch process that removesspring sheet material between each contact. Conductive path 2712accordingly constitutes a narrow portion of the etched spring sheet.

FIG. 27D illustrates another contact arrangement 2700D, according to anadditional configuration of the present invention. Conductive capturepads 2720 that surround vias 2702 may be separated from base portions2708 by an adhesive layer (see, e.g., layer 920 of FIG. 9). In thisconfiguration, electrical connection between contact base portions 2708and vias 2702 can be made by removing a small portion of the adhesivelayer (not shown) to expose pad 2720 in the region of base 2708 andforming a connection between the base and pad during an plating step.

In other configurations of this invention, selected elastic contact armsfrom an array of contacts can be more remotely coupled to contact vias,wherein a conductive path extends over a further distance on aninterposer substrate surface. For example, a “circuit” pattern ofconductive paths can be formed in which a plurality of conductive pathseach terminates at a conductive via on one end and a base of an elasticcontact at the other end. However, the contact base need not be adjacentor even near the conductive via to which it is electrically coupledusing the conductive path. FIG. 28 illustrates interposer 2800 havingtwo contacts 2808A, 2808B each remotely connected to a respectiveconductive via 2802A, 2802B through conductive paths 2812A, 2812B,respectively, according to another configuration of this invention.

In other configurations of this invention, a plurality of contacts canbe arranged as a group in a first portion of a substrate surface, whilea plurality of conductive vias is arranged in a second portion of asubstrate. FIG. 29A illustrates an interposer 2900B that includes aconductive via array 2902A arranged in a first region of insulatingsubstrate 2904A, and a contact array 2906A arranged in a second regionof substrate 2904A. Contact array 2906A is electrically connected toconductive via array 2902A through conductive paths that form a circuit2908A, which includes a plurality of conductive lines. Each conductiveline terminates at a conductive via on one end and an elastic contact onthe other end. In other configurations of this invention, the circuitryof conductive paths can be arranged so that multiple elastic contactscan be electrically connected to a common conductive via, and,alternatively, multiple conductive vias can be electrically connected toa common elastic contact.

The process illustrated in FIGS. 1, 3A, and 3B provides for flexibilityin establishing the positional relationship between elastic contacts andrespective conductive vias. Such flexibility provides the ability totailor an interposer to the structure of components to be connected bythe interposer. For example, for components having a similar planardimension to the interposer, a first component to be connected to oneside of an interposer may have all the active electrical devices (withrespective electrical leads) arranged in one region of the componentsurface. The first component may be designed to be reversibly connectedthrough a spring connection, so that it can be contacted by an array ofelastic contacts in a first region of an interposer (see region A ofFIG. 29A). A second component to be connected to the opposite side ofthe interposer may have devices grouped in a different region withrespect to the first region. The second group can be designed to coupleto the interposer through a solder connection at vias, such that a viaarray of the interposer can be arranged over the second region (seeregion B of FIG. 29A).

Because elastic contact portions of contacts are independently spatiallyconfigurable in their position and direction with respect to the arrayof conductive vias to which the contacts are electrically coupled,interposers with superior properties can be fabricated in accordancewith aspects of this invention. For example, the pitch of contacts in acontact array affixed to an interposer surface can be different than thepitch of a conductive via array. In such case, where an interposer isused to interconnect a first component having the pitch of the contactarray with a second component having the pitch of the conductive viaarray, it may be convenient to arrange the contact array in a separateportion of the substrate from the conductive via array (see FIG. 29B).

In addition, for any given pitch of an external component to beconnected to the interposer, the direction that contact arms extend froma contact base can be arranged to maximize the contact arm length (andtherefore the working distance) for the given pitch. Thus, contact armscan be arranged in an elastic sheet, such that the arms extend in adiagonal direction with respect to a square or rectangular array.

By providing a highly elastic contact arm, a contact array with a largerworking distance can be fabricated. In applications in which reversiblecontact of the interposer to external components is desired, theadditional ability to provide a relatively longer contact arm for agiven array pitch affords a greater “reversible working range.” The term“reversible working range” refers to a range (such as a distance range)through which an interposer contact (or contact array) can be reversiblydisplaced while meeting specified criteria for performance, such aselectrical conductivity, inductance, high frequency performance, andmechanical performance (such as a requirement that external appliedforce be below a certain value). Reversibility denotes that the workingrange of the contact (array) is preserved when the contact arms of thecontact array are brought into contact with an external device,compressed, released from contact, and subsequently brought back intocontact with an external device. Thus, a contact having a reversibleworking range of about 20 mil would maintain acceptable properties, suchas conductivity and inductance, throughout a distance of 20 mil whilebeing compressed and released repeatedly.

The working range or reversible working range of elastic contactsarranged in an array can be further expressed in terms of the pitch ofthe array. Configurations of the present invention provide interposerswhose array pitch and contact size are generally scalable from an arraypitch of about 50 mils down to an array pitch of microns or less. Inother words, the processes for making the contact arrays and via arrayscan be scaled down from current technology (˜1-2 mm pitch) at least by afactor of 10-100. Accordingly, as the contact array pitch decreases,contact size and working range may decrease. For a given array pitch,the normalized working range is defined as the working range divided bythe pitch. The normalized working range is similar to the elasticity tosize ratio mentioned above. However, the former parameter refers to aratio of an elastic displacement range of a contact arm as compared tothe length (size) of the elastic contact arm, whereas the normalizedworking range is a measure of the relative displacement range of elasticcontacts (in which properties of interest are acceptable) as compared tothe space between contacts (pitch). Because configurations of thisinvention provide elastic contacts whose length can exceed the arraypitch (see discussion with respect to FIG. 27C), the vertical range ofdisplacement of a contact arm (equal to the working range at the limit)can attain a large fraction of the size of the array pitch. For example,if a contact arm at rest above the interposer substrate forms anapproximate 45 degree angle viewed in cross section, the height of thedistal end of the contact above the substrate is about 0.7 times itslength. Accordingly, when the contact arm is brought into contact withan external component, its range of travel can approximate the value of0.7 times the contact length before the contact arm encounters thesubstrate surface. In this case, if the contact arm length is designedto lie along an array diagonal (and has a length about a factor of1.2-1.4 times the array pitch), the normalized displacement achievable(equivalent to an upper limit on the normalized working range) would bein the range of 0.8-1.0. In practical implementations of this invention,normalized working ranges between about 0.25 and at about 1.0 arepossible.

In configurations of this invention employing BeCu, spring steel, oranother highly elastic conductive material, the yield stress is designedto exceed the displacement force applied to a contact arm when thecontact arm is displaced through its maximum displacement. Accordingly,after an interposer whose contacts are displaced to the maximum extentis released from contact with an external component, the height of thedistal end of the contact arms above the interposer substrate surfacecan be maintained through repeated contact with external electricalcomponents. This is because the contact arms have a relatively largerelastic range, and are therefore subject to little or no plasticdeformation (yield) during repeated loading of an external component. Inother words, the contacts exhibit an elastic response over the entireworking range, such that the contacts do not exhibit plastic yielding upto the point at which the contacts cannot be displaced further.Accordingly, the normalized reversible working range (defined as thenormalized working range divided by the array pitch) of elastic contactscan be in the range of 0.25 to 0.75 for configurations of thisinvention. For 1.12 mm array pitch, a reversible working range of about0.3 mm to 1.0 mm is possible for contacts arranged according toconfigurations of the present invention.

In other configurations of this invention, a contact array having Nnumber of contacts can be aligned on top of a substrate surface having aM number of vias. In such an arrangement, not every via would uniquelycouple to contact, if M>N, or not every contact would uniquely couple toa via if M<N. In some configurations of this invention, elastic contactsare aligned to vias such that a contact extends over a via, asillustrated in FIG. 9. However, in other configurations of thisinvention, the contacts may be arranged so that elastic arm portions donot extend over conductive vias. For example, referring again to FIG. 9,elastic portions 916 can be arranged to extend to the right so thatportions 916 lie over substrate 904 rather than over conductive vias902. In other configurations of this invention, elastic contact arms,such as portions 916 can be arranged such that, when considered in planview, no portions of the contact arms overlap conductive vias.

In some configurations of this invention, elastic contacts such as thoseillustrated in FIGS. 2 and 27A-29B can be arranged on both sides of aninterposer, while in other configurations the contact arrays are onlyarranged on one side of a connector. In addition, differentconfigurations of contact arrays can be arranged on opposite sides of aninterposer. For example, in one configuration of this invention, a firstside of an interposer contains a “local coupling” of contacts andconductive vias, such as illustrated in FIG. 27A, while an opposite sideof the interposer contains a “remote coupling” of contacts andconductive vias, as illustrated in FIG. 29A. It will be understood thatthis invention includes configurations in which other combinations ofsingle contacts, irregularly spaced contacts, and multiple arrays ofcontacts can be arranged on one side of an interposer, and connected incombinations of remote and local coupling to respective conductive vias.

In another configuration of the present invention, as illustrated inFIG. 29B, an interposer 2900B for connecting two components includes anelastic contact array 2902B having a first pitch, wherein the contactarray is electrically coupled (via conductive paths 2908B) to an arrayof conductive vias 2906B having a second pitch different from the firstpitch. Accordingly, the interposer can be used to electricallyinterconnect a first electrical component having electrical contactpoints spaced according to the first pitch and a second electricalcomponent having electrical contact points spaced according to thesecond pitch. For example, the conductive via array might couple to apin array in a second component having the second pitch, while theelastic contacts couple to a ball array of the first component havingthe first pitch.

In FIGS. 27B, 28, 29A, and 29B, conductive paths that connect respectiveelastic contacts to conductive vias may reside on the top surface of aninterposer. However, in some configurations of the present invention,the conductive paths, for example paths 2908A depicted in FIG. 29A, canbe formed and embedded within an interposer below the surface, such thatthe ends of each conductive path still form an electrical connection torespective vias or elastic contacts. For example, a conductive line2908A can be embedded below the surface of substrate 2904A and rise tothe substrate surface at one end to connect to an elastic contact basein array 2906A. At the opposite end of the same conductive line 2908A,the conductive line can connect to a conductive via of array 2902A at,for example, a conductively plated vertical wall at a region below thesubstrate surface or on the surface.

Additionally, because lithographic patterning of contact arrays isperformed independent of the interposer substrate structure, the contactarrays can be arranged in any desirable configuration with respect tointerposer substrate conductive vias. Thus, an array of contacts whereeach contact is electrically connected to a given via in an array ofvias, need not be located adjacent to that array of vias. This affordsflexibility in design of the contact size and shape, since the contactsarms can in principle be designed to be much larger than a via diameter,for example. This affords a larger vertical working distance incomparison to arrangements where contact arms are located over vias.

In further configurations of the present invention, heterogeneouscontacts are provided on a same side of a substrate, such as aninterposer. One example of a heterogeneous contact arrangement is anarray of contacts whose contact arm length varies between contacts. Forexample, a contact array can comprise two mutually interspersed contactsub arrays in which every other contact have mutually the same contactarm length and adjacent contacts have differing contact arm length.

FIGS. 30A and 30B are cross-sectional views of a connector according toan alternate configuration of the present invention. Referring to FIG.30A, a connector 220 includes a first set of contact elements 224, 226and 228 and a second set of contact elements 225 and 227, all formed ona substrate 222. The first set of contact elements 224, 226 and 228 hasa curved spring portion longer than the curved spring portion of thesecond set of contact elements 225 and 227. In other words, the heightof the curved spring portion of contact elements 224, 226 and 228 isgreater than the height of the curved spring portion of contact elements225 and 227.

By providing contact elements having different height, connector 220 ofthe present invention can be advantageously applied in “hot-swapping”applications. Hot-swapping refers to mounting or demounting asemiconductor device while the system to which the device is to beconnected is electrically active without damaging to the semiconductordevice or the system. In a hot-swapping operation, various power andground pins and signal pins must be connected and disconnected insequence and not at the same time in order to avoid damages to thedevice or the system. By using a connector including contact elementswith different heights, taller contact elements can be use to makeelectrical connection before shorter contact elements. In this manner, adesired sequence of electrical connection can be made to enablehot-swapping operation.

As shown in FIG. 30A, connector 220 is to be connected to asemiconductor device 230 including metal pads 232 formed thereon. Whenan external biasing force F is applied to engage connector 220 withsemiconductor device 230, the tall contact elements 224, 226 and 228make contact with respective metal pads 232 first while shorter contactelements 225 and 227 remain unconnected. Contact elements 224, 226 and228 can be used to make electrical connection to power and ground pinsof semiconductor device 230. With further application of the externalbiasing force F (FIG. 30B), shorter contact elements 225 and 227, makingconnection to signal pins, can then make connection with respectivemetal pads 232 on device 230. Because the contact elements of thepresent invention have a large elastic working range, the first set ofcontact elements can be further compressed than the second set ofcontact elements without compromising the integrity of the contactelements. In this manner, connector 220 enables hot-swapping operationwith semiconductor device 230.

As described above, when the contact elements of the connector of thepresent invention are formed using semiconductor fabrication processes,contact elements having a variety of mechanical and electricalproperties can be formed. In particular, the use of semiconductorfabrication processing steps allows a connector to be built to includecontact elements having different mechanical and/or electricalproperties. Such “semiconductor” fabrication processes nevertheless canbe employed in conjunction with substrates, such as PCB substrates, toform elastic contact arrays having contact sizes larger than the typicalmicron or sub-micron sizes typical of present day semiconductor devices.For example, the processes illustrated, for example, in FIGS. 14A-17H,can be used to form contact arrays on PCB-type substrates having arraypitches in the range of about 10-100 microns.

Thus, according to another aspect of the present invention, a connectorof the present invention is provided with contact elements havingdifferent operating properties. That is, the connector includesheterogeneous contact elements where the operating properties of thecontact elements can be selected to meet requirements in the desiredapplication. In the present description, the operating properties of acontact element refer to the electrical, mechanical and reliabilityproperties of the contact element. By incorporating contact elementswith different electrical and/or mechanical properties, the connector ofthe present invention can be made to meet all of the stringentelectrical, mechanical and reliability requirements for high-performanceinterconnect applications.

According to one aspect of the present invention, the followingmechanical properties can be specifically engineered for a contactelement or a set of contact elements to achieve certain desiredoperational characteristics. First, the contact force for each contactelement can be selected to ensure either a low resistance connection forsome contact elements or a low overall contact force for the connector.Second, the elastic working range of each contact element over which thecontact element operates as required electrically can be varied betweencontact elements. Third, the vertical height of each contact element canbe varied. Fourth, the pitch or horizontal dimensions of the contactelement can be varied.

According to alternate aspects of the present invention, the electricalproperties can be specifically engineered for a contact element or a setof contact elements to achieve certain desired operationalcharacteristics. For instance, the DC resistance, the impedance, theinductance and the current carrying capacity of each contact element canbe varied between contact elements. Thus, a group of contact elementscan be engineered to have lower resistance or a group of contactelements can be engineered to have low inductance.

In most applications, the contact elements can be engineered to obtainthe desired reliability properties for a contact element or a set ofcontact elements to achieve certain desired operational characteristics.For instance, the contact elements can be engineered to display no orminimal performance degradation after environmental stresses such asthermal cycling, thermal shock and vibration, corrosion testing, andhumidity testing. The contact elements can also be engineered to meetother reliability requirements defined by industry standards, such asthose defined by the Electronics Industry Alliance (EIA).

When the contact elements in the connectors of the present invention arefabricated as a MEMS grid array, the mechanical and electricalproperties of the contact elements can be modified by changing, forexample, the following design parameters. First, the thickness of thecurved spring portion of the contact element can be selected to give adesired contact force. For example, a thickness of about 30 micronstypically gives low contact force on the order of 10 grams or less whilea flange thickness of 40 microns gives a higher contact force of 20grams for the same displacement. The width, length and shape of thecurved sprint portion can also be selected to give the desired contactforce.

Second, the number of curved spring portions to include in a contactelement can be selected to achieve the desired contact force, thedesired current carrying capacity and the desired contact resistance.For example, doubling the number of curved spring portions roughlydoubles the contact force and current carrying capacity while roughlydecreasing the contact resistance by a factor of two.

Third, specific metal composition and treatment can be selected toobtain the desired elastic and conductivity characteristics. Forexample, Cu-alloys, such as copper-beryllium, can be used to provide agood tradeoff between mechanical elasticity and electrical conductivity.Alternately, metal multi-layers can be used to provide both excellentmechanical and electrical properties. In one configuration, a contactelement is formed using titanium (Ti) coated with copper (Cu) and thenwith nickel (Ni) and finally with gold (Au) to form a Ti/Cu/Ni/Aumultilayer. The Ti can provide rigidity and high mechanical durabilitywhile the Cu can provide excellent conductivity as well as elasticityand the Ni and Au layers can provide excellent corrosion resistance.Finally, different metal deposition techniques, such as plating orsputtering, and different metal treatment techniques, such as alloying,annealing, and other metallurgical techniques can be used to engineerspecific desired properties for the contact elements.

Fourth, the curvature of the curved spring portion can be designed togive certain electrical and mechanical properties. The height of thecurved spring portion, or the amount of projection from the baseportion, can also be varied to give the desired electrical andmechanical properties.

One feature of the above processes illustrated in particular in FIGS. 1and 3A-3B is that the need for expensive tools to form contactstructures is avoided. A great deal of contact design flexibility isafforded by the fact that two dimensional contact design is accomplishedby well established computer-aided design. In other words, a mask orpatterning process to form a desired contact structure can be designedusing Gerber or other systems. Custom design can be performed or contactshapes can be selected from design libraries. Similarly, forming toolscan be easily fabricated using designs that are matched to the contactarray design of the spring sheet array to be formed. The lithographictechniques used for patterning spring sheets and/or forming tools arerobust and inexpensive.

In the specific examples illustrated in FIGS. 2, 7A, 7B, 7C, 7D, 9 and12 contact arms have the shape of rolling beams. By proper choice ofmaterial, contact shape design, and processing conditions, discussedfurther below, the performance of such contacts can be extended beyondthat achievable by conventional contacts made for interposers. Thecontacts illustrated in FIG. 9, for example, can be engineered to behighly elastic, such that little or no fatigue occurs with repeated upand down displacement of the contacts during coupling and decoupling toan external device. Additionally, the length of the contacts can bedesigned independent of the via size or via spacing, so that largerworking ranges (related to the vertical displacement range of thecontacts) can be achieved in comparison to contacts formed directly overvias. Moreover, by proper choice of composition of a conductive sheetfor forming the contact arms, and proper heat treatment of the contacts,as well as proper interposer design, the mechanical properties of thecontact arms can be tuned to fit the desired application. For example,as discussed further below, the effective elastic modulus of thecontacts as well as the elastic range can be varied by heat treatment ofCu alloys used to form the contact, as well as design of the region nearthe contact base.

The mechanical properties of the elastic contacts can be furthertailored by engineering of the adhesive layer during the bondingprocess. Adhesive layers suitable for configurations of the presentinvention typically contain a polymer inner layer surrounded by epoxylayers on top and bottom. It has been experimentally determined thatproper choice of adhesive layer can increase working range by about0.5-1 mil for contacts having a working range on the order of 6-8 mils.In addition, by providing adhesive reservoirs acting as flowrestrictors, in the substrate or spring sheet (see elements 710, 732,and 742 of FIGS. 7A, 7C, and 7D, respectively) superior contactproperties are obtained after bonding. By proper design of such flowrestrictors, the adhesive flow can be minimized. By preventing adhesivefrom flowing to the underside of a contact arm during bonding of aspring sheet, the flow restrictors facilitate fabrication of contactarms having a longer effective length. In other words, the point aboutwhich the contact arm rotates during downward displacement iseffectively shorter when adhesive is located on the underside of thecontact arms near the contact base (compare contacts 702 of FIGS. 7A and7B). By ensuring no adhesive is located under the contact arm, thusextending the effective contact arm length, a greater displacement of acontact arm for a given load (stress) occurs, thereby reducing thepossibility that the contact arm is subject to a yield stress before itreaches its maximum displacement.

The effect of tailoring the adhesive layer and flow restrictors adjacentto the adhesive layer is shown in FIGS. 31 and 32, which illustrate forcontacts bonded with FR0111 and LF0111 adhesive materials, respectively,the measured working range for substrates having partially etched flowrestrictors and fully etched flow restrictors. Changing adhesivematerial results in a change in working range of about 0.6-0.7 mil,while changing from a partially to fully etched flow restrictor inducesa similar change in working range (See FIGS. 7C and 7D for a comparisonof substrates having partially etched as opposed to fully etched flowrestrictors).

FIG. 33A illustrates, in accordance with a further configuration of thisinvention, a capture pad layout 3300 that includes pads 3302, eachprovided with an arc-shaped slot 3304 configured to capture adhesiveduring a bonding process. The slots are designed to form a concentricarc around a via (not shown). For example, a substrate provided with ametal cladding having the pattern of pads 3302 can have vias drilledthrough the substrate and located on each pad to be concentric with agiven slot 3304. Contacts in a spring sheet to be bonded to thesubstrate can be arranged such that the contact arms extend from baseportions located above the slots 3304. During bonding, adhesive that isforced toward the open via can be collected in a slot 3304 provided nearthe edge of the via.

FIGS. 33B-33E illustrate, in perspective view, flow restrictorvariations provided in exemplary contact structures, according tofurther configurations of the present invention. In each figure, theupper contact surface shown represents the contact surface that isconfigured for bonding to a connector substrate. FIG. 33B illustrates adual contact arm contact 3310 having a partially etched region 3316forming a square-like depression within base portion 3312 andsurrounding the region where contact arms 3314 join base 3312. Whencontact 3310 is bonded to a substrate, excess adhesive is accommodatedwithin square depression 3316 that acts as a flow restrictor, preventingadhesive from flowing under regions 3318.

FIG. 33C illustrates a further contact structure 3320, in which flowrestrictors 3326 are provided as two portions covering approximately onehalf of the square depression of regions 3316 and located adjacent towhere contact arms 3314 join base 3312.

FIG. 33D illustrates a further contact structure 3330, illustrating anarray of contacts that each include, in addition to partially etchedflow restrictors 3316, fully etched oval regions 3332. Regions 3332 areeach located adjacent to a portion of regions 3316 and near to regionsin which contact arms 3314 join base portions 3312.

FIG. 33E illustrates another contact structure 3340, having featuressimilar to those of contact structure 3340, with the addition ofcircular fully etched flow restrictors 3349 that are located in cornerregions between contacts of the contact array.

In addition, open through holes in the spring sheet can be provided toallow adhesive to flow up and over the top of the spring sheet. In oneexample, a contact structure includes a base portion provided with ahole within and around which adhesive material is disposed. In oneconfiguration of this invention, the adhesive material has a rivet-likestructure that forms by extrusion of adhesive through an aperture, suchas a circular hole in the spring sheet, during bonding of the springsheet to the substrate. The head of the rivet forms around the hole andacts to restrain the contact during mechanical deflection of the contactarm. FIG. 34A illustrates a plan view of an exemplary contactarrangement according to a further configuration of this invention.Arrangement 3400 includes an array of contacts 3402 whose base portions3404 contain through holes 3406 that are configured to accommodateadhesive flow from an underlying adhesive layer 3408. Adhesive flowingthrough a circular hole 3406 can form a mound that extends (out of thepage of FIG. 34A) above the plane of the base 3404 and extends beyondthe outer diameter of the hole. When viewed in cross-section, asillustrated in FIG. 34B, the adhesive forms a mushroom, or rivet-likestructure that serves to affix the base portion 3404 to the substrate3410.

FIG. 34C illustrates a variant of the contact structure of FIGS. 34A andB, in which the top surface of the adhesive extruded within through hole3412 does not substantially extend above the surface of the base.Because the through hole has a tapered cross section that increases indiameter towards the surface, the extruded adhesive portion 3410 forms amechanical restraint to movement of the base without extending above thetop surface of the base portion 3404. Such a cross-sectional shape canbe imparted to a through hole etched in a spring sheet by use ofisotropic etchants.

The adhesive rivet portion 3406 can also act as a hard stop thatprevents an external component from hitting other portions of asubstrate, such as substrate 3410. As contact arm 3402 is displaceddownwardly by a feature in an external device toward substrate 3410,other portions of the external device may approach substrate 3410 inother locations. An array of rivets 3406 can act to prevent the otherportions of the external component from approaching too closely tosubstrate 3410, and thereby prevent damage during coupling to theexternal component.

In other configurations of the present invention, portions of theadhesive layer displaced upwardly to form rises or bumps near the edgeof vias can also act as hard stops, in this case for adjacent contactarms (see adhesive layer portion 734 in FIG. 7C). The top of theadhesive layer thus prevents the contact arm from extending too far in adownward direction and can thereby reduce the tendency of the contactarm to reach a yield strain (displacement) point.

In addition, the ability to raise the local surface level of theadhesive in given locations in the substrate provides a means toelectrically shunt contacts during displacement of the contacts towardsthe substrate. After the formation stage illustrated in FIG. 7C, forexample, an electroplating step takes place that coats exposed portionsof the adhesive layer, with a conductive layer 3504 that can engagecontact 3502, as illustrated in FIG. 35, leading to a smaller electricalpath length and lower resistance. After the point P1 where theelectrical shunting takes place, the distal end of contact arm 3506 canstill be displaced downwardly.

Finally, the mechanical response of the contacts can be tailored byengineering a coverlay structure that is placed on top of portions ofthe contacts proximate to the contact arms.

The foregoing disclosure of configurations of the present invention hasbeen presented for purposes of illustration and description. It is notintended to be exhaustive or to limit the invention to the precise formsdisclosed. Many variations and modifications of the configurationsdescribed herein will be apparent to one of ordinary skill in the art inlight of the above disclosure. The scope of the invention is to bedefined only by the claims appended hereto, and by their equivalents.

Further, in describing representative configurations of the presentinvention, the specification may have presented the method and/orprocess of the present invention as a particular sequence of steps.However, to the extent that the method or process does not rely on theparticular order of steps set forth herein, the method or process shouldnot be limited to the particular sequence of steps described. As one ofordinary skill in the art would appreciate, other sequences of steps maybe possible. Therefore, the particular order of the steps set forth inthe specification should not be construed as limitations on the claims.In addition, the claims directed to the method and/or process of thepresent invention should not be limited to the performance of theirsteps in the order written, and one skilled in the art can readilyappreciate that the sequences may be varied and still remain within thespirit and scope of the present invention.

1. An electrical interposer having an array of elastic contacts disposedon an interposer substrate, the array of contacts coupled usingconductive vias disposed within an insulating substrate of theinterposer and extending from a first surface to a second surface of theinsulating substrate; each elastic contact comprising a base portion inelectrical contact with a respective conductive via and a contact armhaving a longitudinal dimension significantly greater than a diameter ofthe conductive via and having a distal portion extending above the firstsurface and substantially over a planar portion of the first surface,the base portion and contact arm comprising a unitary portion of aspring sheet material patterned and formed in three dimensions, andannealed to form an elastic precipitation hardened microstructure, theelastic contact joined to the interposer substrate using an adhesivelayer.